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均一組成混晶半導体バルク結晶成長
https://jaxa.repo.nii.ac.jp/records/13513
https://jaxa.repo.nii.ac.jp/records/135131073437b-d63a-4298-a3a3-a744238b51ad
名前 / ファイル | ライセンス | アクション |
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63349015.pdf (368.4 kB)
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Item type | 会議発表論文 / Conference Paper(1) | |||||
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公開日 | 2015-03-26 | |||||
タイトル | ||||||
タイトル | 均一組成混晶半導体バルク結晶成長 | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 結晶成長 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 半導体材料 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | インジウム化合物 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | インジウム・ガリウム・アンチモン | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | InGaSb | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 3元化合物半導体 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 温度勾配 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 冷却 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | パルス加熱 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 温度制御 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 濃度プロファイル | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 組成プロファイル | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 結晶形態学 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 結晶性 | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | crystal growth | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | semiconductor material | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | indium compound | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | indium gallium antimony | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | InGaSb | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | ternary compound semiconductor | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | temperature gradient | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | cooling | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | pulse heating | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | temperature control | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | concentration profile | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | composition profile | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | crystal morphology | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | crystallinity | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
資源タイプ | conference paper | |||||
その他のタイトル(英) | ||||||
その他のタイトル | Growth of homogeneous alloy semiconductors | |||||
著者 |
早川, 泰弘
× 早川, 泰弘× 疋田, 卓也× 村上, 倫章× 今野, 有希子× 小山, 忠信× 百瀬, 与志美× 小澤, 哲夫× 宮澤, 政文× 熊川, 征司× Hayakawa, Yasuhiro× Hikida, Takuya× Murakami, Noriaki× Konno, Akiko× Koyama, Tadanobu× Momose, Yoshimi× Ozawa, Tetsuo× Miyazawa, Masafumi× Kumagawa, Masashi |
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著者所属 | ||||||
静岡大学 | ||||||
著者所属 | ||||||
静岡大学 | ||||||
著者所属 | ||||||
静岡大学 | ||||||
著者所属 | ||||||
静岡大学 | ||||||
著者所属 | ||||||
静岡大学 | ||||||
著者所属 | ||||||
静岡大学 | ||||||
著者所属 | ||||||
静岡理工科大学 | ||||||
著者所属 | ||||||
静岡大学 | ||||||
著者所属 | ||||||
静岡大学 | ||||||
著者所属(英) | ||||||
en | ||||||
Shizuoka University | ||||||
著者所属(英) | ||||||
en | ||||||
Shizuoka University | ||||||
著者所属(英) | ||||||
en | ||||||
Shizuoka University | ||||||
著者所属(英) | ||||||
en | ||||||
Shizuoka University | ||||||
著者所属(英) | ||||||
en | ||||||
Shizuoka University | ||||||
著者所属(英) | ||||||
en | ||||||
Shizuoka University | ||||||
著者所属(英) | ||||||
en | ||||||
Shizuoka Institute of Science and Technology | ||||||
著者所属(英) | ||||||
en | ||||||
Shizuoka University | ||||||
著者所属(英) | ||||||
en | ||||||
Shizuoka University | ||||||
出版者 | ||||||
出版者 | 宇宙航空研究開発機構宇宙科学研究本部 | |||||
出版者(英) | ||||||
出版者 | Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA/ISAS) | |||||
書誌情報 |
宇宙利用シンポジウム 第23回 平成18年度 en : Space Utilization Research: Proceedings of the Twenty-third Space Utilization Symposium p. 57-60, 発行日 2007-03 |
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抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | The preliminary experiments to grow homogeneous InGaSb bulk crystals by the temperature gradient method under microgravity have been carried out on earth. During the InGaSb crystal growth, heat pulses were introduced and the growth rate was measured using impurity striations. The temperature gradient in the solution was estimated from the indium compositional profile of the growth crystal. The appropriate cooling rate was calculated from the growth rate and temperature gradient. The homogeneous InGaSb crystals with aimed composition were grown by the appropriate cooling rate. | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: AA0063349015 |