Gakushuin University Department of Physics, Faculty of Science
Tokyo Metropolitan Institute of Technology Department of Aerospace Engineering, Faculty of Engineering
Tokyo Metropolitan Institute of Technology Department of Aerospace Engineering, Faculty of Engineering
Tokyo Metropolitan Institute of Technology Department of Aerospace Engineering, Faculty of Engineering
Gakushuin University Department of Physics, Faculty of Science
Gakushuin University Department of Physics, Faculty of Science
出版者
宇宙航空研究開発機構宇宙科学研究本部
出版者（英）
Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA/ISAS)
雑誌名
宇宙利用シンポジウム 第20回 平成15年度
雑誌名(英)
Space Utilization Research: Proceedings of the Twentieth Space Utilization Symposium
ページ
267 - 270
発行年
2004-03
抄録（英）
The surface tension of molten semiconductors, Si, Ge, and others is important property for process control in the crystal growth. However there have been only a few reports on the surface tension of molten Ge including undercooled region. Therefore, with these of electromagnetic levitation method (EML), the temperature dependence of surface tension of deeply undercooled molten Ge was measured.
過冷却状態におけるGe融液の表面張力温度依存性
