Hokkaido University Graduate School of Science
Hokkaido University Graduate School of Science
National Space Development Agency of Japan
出版者
宇宙科学研究所
出版者（英）
The Institute of Space and Astronautical Science (ISAS)
雑誌名
宇宙利用シンポジウム 第19回 平成14年度
雑誌名(英)
Space Utilization Research: Proceedings of the Nineteenth Space Utilization Symposium
ページ
216 - 219
発行年
2003-02
抄録（英）
The liquid state near the eutectic point is interested because of the low temperature at which the role of thermal motion is relatively suppressed. The role of inter-atomic interaction is expected to prevail. Under this circumstance new phenomena and utilities are expected. Up to last symposium the growth of giant concentration fluctuations near the eutectic point has been reported in the homogeneous liquid phase of In-Sb, Ga-Sb, Ag-Ge, Ag-Si, Au-Ge systems. The present study reports the growth of the concentration fluctuation in liquid Au-Si alloys, which shows the deepest eutectic points. The result was discussed in the trend of all semiconductor-metal eutectic systems. It is concluded that the giant concentration fluctuation grows in the considerably wide range of homogeneous liquid phase near the eutectic point. From the analysis of all metal-semiconductor systems described above, the growth of the concentration fluctuation is more distinct with the decrease of the eutectic temperature and the concentration difference between the composition of semiconductor and that of eutectic point. The supercooling of homogeneous liquid phase is also discussed with the relation to the large concentration fluctuation in the homogeneous liquid phase.
深い共晶系の揺らぎ構造と過冷却機
