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SiGe Crystal Growth by the Traveling Liquidus-Zone Method aboard the International Space Station
https://jaxa.repo.nii.ac.jp/records/21714
https://jaxa.repo.nii.ac.jp/records/21714f450b124-4f2a-40c3-869f-9d6e0bcd9440
Item type | 学術雑誌論文 / Journal Article(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2016-06-24 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | SiGe Crystal Growth by the Traveling Liquidus-Zone Method aboard the International Space Station | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | SiGe | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | crystal growth | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | TLZ method | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | ISS | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Microgravity | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
木下, 恭一
× 木下, 恭一× 荒井, 康智× 稲富, 裕光× 塚田, 隆夫× 宮田, 浩旭× 田中, 涼太× 阿部, 敬太× 住岡, 沙羅× 久保, 正樹× 馬場, 嵯登史× Kinoshita, Kyoichi× Arai, Yasutomo× Inatomi, Yuko× Tsukada, Takao× Miyata, Hiroaki× Tanaka, Ryota× Abe, Keita× Sumioka, Sara× Kubo, Masaki× Baba, Satoshi |
|||||
出版者 | ||||||
出版者 | Japan Society of Microgravity Application (JASMA) | |||||
出版者(英) | ||||||
出版者 | 日本マイクログラビティ応用学会(JASMA) | |||||
書誌情報 |
en : International Journal of Microgravity Science and Application (IJMSA) 巻 33, 号 2, p. 330213-1-330213-5, 発行日 2016-04-30 |
|||||
抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Total of four SiGe crystal growth experiments aboard the ISS were successfully performed for evaluating a two-dimensional growth model of the traveling liquidus zone (TLZ) method and for obtaining insights into large homogeneous SiGe crystal growth conditions. The TLZ growth requires diffusion limited mass transport in a melt and experiments in microgravity are essential. Although a little deviation from the expected compositional uniformity due to emissivity change of the cartridge surface is observed, homogeneous SiGe crystals are grown. Over all axial growth rate is consistent with the one-dimensional TLZ growth model prediction. However, radial growth rates are different from the two-dimensional growth model prediction. The difference is closely related to the flat interface shape in space grown crystals compared with the terrestrial ones and the radial compositional uniformity is much better than those of terrestrially grown crystals. Suppression of convection in a melt is favorable for obtaining flat freezing interface and is beneficial to large homogeneous SiGe crystal growth. It is expected that the obtained results are utilized and large homogeneous crystal growth is realized on the ground and electronic devices using SiGe substrates are developed. | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 形態: カラー図版あり | |||||
内容記述(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Physical characteristics: Original contains color illustrations | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0915-3616 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN10537663 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.15011/ijmsa.33.330213 | |||||
関連名称 | info:doi/10.15011/ijmsa.33.330213 | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: DS1640101000 |