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Influence of electron irradiation on electroluminescence of Cu(In,Ga)Se2 solar cells
https://jaxa.repo.nii.ac.jp/records/22411
https://jaxa.repo.nii.ac.jp/records/2241173f653ee-dc0a-46c2-aac9-b29dec073d76
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2015-03-26 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Influence of electron irradiation on electroluminescence of Cu(In,Ga)Se2 solar cells | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
川北, 史朗
× 川北, 史朗× 今泉, 充× 石塚, 尚吾× 柴田, 肇× 仁木, 栄× 奥田, 修一× 艸分, 宏昌× Kawakita, Shirou× Imaizumi, Mitsuru× Ishizuka, Shogo× Shibata, Hajime× Niki, Shigeru× Okuda, Shuichi× Kusawake, Hiroaki |
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著者所属 | ||||||
宇宙航空研究開発機構(JAXA) | ||||||
著者所属 | ||||||
宇宙航空研究開発機構(JAXA) | ||||||
著者所属 | ||||||
産業技術総合研究所(AIST) | ||||||
著者所属 | ||||||
産業技術総合研究所(AIST) | ||||||
著者所属 | ||||||
産業技術総合研究所(AIST) | ||||||
著者所属 | ||||||
大阪府立大学 (OPU) | ||||||
著者所属 | ||||||
宇宙航空研究開発機構(JAXA) | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency(JAXA) | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency(JAXA) | ||||||
著者所属(英) | ||||||
en | ||||||
National Insititute of Advanced Industrial Science and Technology (AIST) | ||||||
著者所属(英) | ||||||
en | ||||||
National Insititute of Advanced Industrial Science and Technology (AIST) | ||||||
著者所属(英) | ||||||
en | ||||||
National Insititute of Advanced Industrial Science and Technology (AIST) | ||||||
著者所属(英) | ||||||
en | ||||||
Osaka Prefecture University (OPU) | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency(JAXA) | ||||||
出版者 | ||||||
出版者 | 応用物理学会 | |||||
出版者(英) | ||||||
出版者 | The Japan Society of Applied Physics | |||||
書誌情報 |
en : Japanese Journal of Applied Physics(JJAP) 巻 53, 号 5S1, p. 05FW08-1-05FW08-4, 発行日 2014-04 |
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文献番号 | ||||||
05FW08 | ||||||
抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Cu(In,Ga)Se2 (CIGS) solar cells were irradiated with 250 keV electrons, which can create only Cu-related defects in the cells, to reveal created radiation defects. The electron irradiation increased electroluminescence (EL) emission intensity from the CIGS cells with similar behavior to light soaking. A hundred keV electrons also increased the EL intensity without producing displacement defects. Both the 100 and 250 keV electrons increased the effective acceptor density and improved cell performance. Since these phenomena have been reported as a light-soaking effect for CIGS solar cells, electron radiation effects with less than 250 keV for CIGS solar cells are thought to be equivalent to the light-soaking effect. | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0021-4922 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA12295836 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.7567/JJAP.53.05FW08 | |||||
関連名称 | info:doi/10.7567/JJAP.53.05FW08 | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: PA1410046000 |