Japan Aerospace Exploration Agency Institute of Space Technology and Aeronautics
Japan Aerospace Exploration Agency Institute of Space Technology and Aeronautics
Japan Aerospace Exploration Agency Institute of Space Technology and Aeronautics
出版者
宇宙航空研究開発機構
出版者（英）
Japan Aerospace Exploration Agency (JAXA)
雑誌名
宇宙航空研究開発機構研究開発資料: 平成15年度総合技術研究本部宇宙領域研究成果報告書:衛星系
雑誌名(英)
JAXA Research and Development Memorandum: FY15 Annual Report of Research & Development on Space Technology in the Institute of Space Technology and Aeronautics: Satellite System
巻
JAXA-RM-04-010
ページ
61 - 64
発行年
2004-10-29
抄録（英）
The radiation responses of InGaP, (In)GaAs and Ge single-junction sub-cells in a triple-junction space solar cell are studied in order to develop a device simulator which predicts the EOL performance of space solar cells. InGaP top-cells exhibit no significant difference in radiation degradation trends between AM0 light and dark conditions during irradiation. The radiation tolerance of (In)GaAs middle-cells degrades with increasing indium content. However, the absolute value of Isc for a higher In content cell still exceeds that of a GaAs (In = 0 percent) cell after irradiation. Ge bottom-cells exhibit good radiation tolerance as expected. This study is the first to reveal precise radiation response of the sub-cells.
高効率3接合太陽電池に関する研究
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