A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10

doi:http://dx.doi.org/10.1007/s12217-016-9493-x

A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10 利用統計を見る

アイテムタイプ	学術雑誌論文 / Journal Article
言語	英語
キーワード	Microgravity, Chinese recovery satellite, Gravity effect, Alloy semiconductor, X-ray penetration method, Temperature freezing method
著者	Yu Jianding Liu Yan Pan Xiuhong Zhao Hongyang Kumar Velu Nirmal Arivanandhan Mukannan 百瀬与志美早川泰弘 Zhang Xingwang Luo Xinghong Okano Yasuhiro 稲富裕光
著者（英）	Yu Jianding Liu Yan Pan Xiuhong Zhao Hongyang Kumar Velu Nirmal Arivanandhan Mukannan Momose Yoshimi Hayakawa Yasuhiro Zhang Xingwang Luo Xinghong Okano Yasuhiro Inatomi Yuko
著者所属	Shanghai Institute of Ceramics, Chinese Academy of Sciences Shanghai Institute of Ceramics, Chinese Academy of Sciences Shanghai Institute of Ceramics, Chinese Academy of Sciences Shanghai Institute of Ceramics, Chinese Academy of Sciences 静岡大学電子工学研究所静岡大学電子工学研究所静岡大学電子工学研究所静岡大学電子工学研究所 Institute of Semiconductor, Chinese Academy of Sciences Institute of Metal Research, Chinese Academy of Sciences 大阪大学宇宙航空研究開発機構宇宙科学研究所(JAXA)(ISAS) : 総合研究大学院大学物理科学研究科
著者所属（英）	Shanghai Institute of Ceramics, Chinese Academy of Sciences Shanghai Institute of Ceramics, Chinese Academy of Sciences Shanghai Institute of Ceramics, Chinese Academy of Sciences Shanghai Institute of Ceramics, Chinese Academy of Sciences Research Institute of Electronics, Shizuoka University Research Institute of Electronics, Shizuoka University Research Institute of Electronics, Shizuoka University Research Institute of Electronics, Shizuoka University Institute of Semiconductor, Chinese Academy of Sciences Institute of Metal Research, Chinese Academy of Sciences Graduate School of Engineering Science, Osaka University Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency(JAXA)(ISAS) : School of Physical Sciences, SOKENDAI (The Graduate University for Advanced Studies)
出版者（英）	Springer
雑誌名	Microgravity - science and technology
巻	28
号	2
ページ	143 - 154
発行年	2016-05
内容記述	著者人数: 12名
内容記述（英）	Accepted: 2016-02-17
ISSN	0938-0108
書誌レコードID	AA10767843
DOI	info:doi/10.1007/s12217-016-9493-x
資料番号	資料番号: SA1160025000

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A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10 利用統計を見る

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