A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10
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アイテムタイプ
学術雑誌論文 / Journal Article
言語
英語
キーワード
Microgravity, Chinese recovery satellite, Gravity effect, Alloy semiconductor, X-ray penetration method, Temperature freezing method
Shanghai Institute of Ceramics, Chinese Academy of Sciences
Shanghai Institute of Ceramics, Chinese Academy of Sciences
Shanghai Institute of Ceramics, Chinese Academy of Sciences
Shanghai Institute of Ceramics, Chinese Academy of Sciences
静岡大学 電子工学研究所
静岡大学 電子工学研究所
静岡大学 電子工学研究所
静岡大学 電子工学研究所
Institute of Semiconductor, Chinese Academy of Sciences
Institute of Metal Research, Chinese Academy of Sciences
大阪大学
宇宙航空研究開発機構宇宙科学研究所(JAXA)(ISAS) : 総合研究大学院大学 物理科学研究科
著者所属(英)
Shanghai Institute of Ceramics, Chinese Academy of Sciences
Shanghai Institute of Ceramics, Chinese Academy of Sciences
Shanghai Institute of Ceramics, Chinese Academy of Sciences
Shanghai Institute of Ceramics, Chinese Academy of Sciences
Research Institute of Electronics, Shizuoka University
Research Institute of Electronics, Shizuoka University
Research Institute of Electronics, Shizuoka University
Research Institute of Electronics, Shizuoka University
Institute of Semiconductor, Chinese Academy of Sciences
Institute of Metal Research, Chinese Academy of Sciences
Graduate School of Engineering Science, Osaka University
Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency(JAXA)(ISAS) : School of Physical Sciences, SOKENDAI (The Graduate University for Advanced Studies)