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Orientation-dependent dissolution and growth kinetics of InxGa1-xSb by vertical gradient freezing method under microgravity
https://jaxa.repo.nii.ac.jp/records/29806
https://jaxa.repo.nii.ac.jp/records/29806200df5ca-6d8b-4a8f-af65-fccf81dd45e7
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2018-07-30 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Orientation-dependent dissolution and growth kinetics of InxGa1-xSb by vertical gradient freezing method under microgravity | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | A1. Directional solidification | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | A2. Growth from melt | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | A2. Microgravity conditions | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | B2. Semiconducting III-V materials | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Kumar, V. Nirmal
× Kumar, V. Nirmal× 早川, 泰弘× Arivanandhan, M.× Rajesh, G.× 小山, 忠信× 百瀬, 与志美× 小澤, 哲夫× 岡野, 泰則× 稲富, 裕光× Kumar, V. Nirmal× Hayakawa, Yasuhiro× Arivanandhan, M.× Rajesh, G.× Koyama, Tadanobu× Momose, Yoshimi× Ozawa, Tetsuo× Okano, Yasunori× Inatomi, Yuko |
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著者所属 | ||||||
宇宙航空研究開発機構宇宙科学研究所(JAXA)(ISAS) | ||||||
著者所属 | ||||||
静岡大学 電子工学研究所 | ||||||
著者所属 | ||||||
Centre for Nanoscience and Technology, Anna University | ||||||
著者所属 | ||||||
Tagore Institute of Engineering and Technology | ||||||
著者所属 | ||||||
静岡大学 電子工学研究所 | ||||||
著者所属 | ||||||
静岡大学 電子工学研究所 | ||||||
著者所属 | ||||||
静岡理工科大学 | ||||||
著者所属 | ||||||
宇宙航空研究開発機構宇宙科学研究所(JAXA)(ISAS) : 静岡大学 電子工学研究所 : 大阪大学 | ||||||
著者所属 | ||||||
宇宙航空研究開発機構宇宙科学研究所(JAXA)(ISAS) : 静岡大学 電子工学研究所 | ||||||
著者所属(英) | ||||||
en | ||||||
Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency(JAXA)(ISAS) | ||||||
著者所属(英) | ||||||
en | ||||||
Research Institute of Electronics, Shizuoka University | ||||||
著者所属(英) | ||||||
en | ||||||
Centre for Nanoscience and Technology, Anna University | ||||||
著者所属(英) | ||||||
en | ||||||
Tagore Institute of Engineering and Technology | ||||||
著者所属(英) | ||||||
en | ||||||
Research Institute of Electronics, Shizuoka University | ||||||
著者所属(英) | ||||||
en | ||||||
Research Institute of Electronics, Shizuoka University | ||||||
著者所属(英) | ||||||
en | ||||||
Department of Electrical Engineering, Shizuoka Institute of Science and Technology | ||||||
著者所属(英) | ||||||
en | ||||||
Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency(JAXA)(ISAS) : Research Institute of Electronics, Shizuoka University : Graduate School of Engineering Science, Osaka University | ||||||
著者所属(英) | ||||||
en | ||||||
Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency(JAXA)(ISAS) : Research Institute of Electronics, Shizuoka University | ||||||
出版者(英) | ||||||
出版者 | Elsevier | |||||
書誌情報 |
en : Journal of Crystal Growth 巻 496, p. 15-17, 発行日 2018 |
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内容記述(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Accepted: 2018-04-27 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0022-0248 | |||||
ISSNONLINE | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1873-5002 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00696341 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1016/j.jcrysgro.2018.04.033 | |||||
関連名称 | info:doi/10.1016/j.jcrysgro.2018.04.033 | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: SA1180029000 |