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Characterization of Electron-Induced Defects in Cu (In, Ga) Se2 Thin-Film Solar Cells using Electroluminescence
https://jaxa.repo.nii.ac.jp/records/39537
https://jaxa.repo.nii.ac.jp/records/395373d9f090e-548a-4e20-a021-19850c1ec2af
名前 / ファイル | ライセンス | アクション |
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PA1410047.pdf (397.4 kB)
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Item type | 会議発表論文 / Conference Paper(1) | |||||
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公開日 | 2015-03-26 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Characterization of Electron-Induced Defects in Cu (In, Ga) Se2 Thin-Film Solar Cells using Electroluminescence | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | defects; radiation effects; thin film | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
資源タイプ | conference paper | |||||
著者 |
川北, 史朗
× 川北, 史朗× 今泉, 充× 石塚, 尚吾× 柴田, 肇× 仁木, 栄× 奥田, 修一× 艸分, 宏昌× Kawakita, Shirou× Imaizumi, Mitsuru× Ishizuka, Shogo× Shibata, Hajime× Niki, Shigeru× Okuda, Shuichi× Kusawake, Hiroaki |
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著者所属 | ||||||
宇宙航空研究開発機構(JAXA) | ||||||
著者所属 | ||||||
宇宙航空研究開発機構(JAXA) | ||||||
著者所属 | ||||||
産業技術総合研究所(AIST) | ||||||
著者所属 | ||||||
産業技術総合研究所(AIST) | ||||||
著者所属 | ||||||
産業技術総合研究所(AIST) | ||||||
著者所属 | ||||||
大阪府立大学 (OPU) | ||||||
著者所属 | ||||||
宇宙航空研究開発機構(JAXA) | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency(JAXA) | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency(JAXA) | ||||||
著者所属(英) | ||||||
en | ||||||
National Insititute of Advanced Industrial Science and Technology (AIST) | ||||||
著者所属(英) | ||||||
en | ||||||
National Insititute of Advanced Industrial Science and Technology (AIST) | ||||||
著者所属(英) | ||||||
en | ||||||
National Insititute of Advanced Industrial Science and Technology (AIST) | ||||||
著者所属(英) | ||||||
en | ||||||
Osaka Prefecture University (OPU) | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency(JAXA) | ||||||
出版者(英) | ||||||
出版者 | Materials Research Society | |||||
書誌情報 |
en : MRS Online Proceedings Library 巻 1538, 発行日 2013 |
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会議概要(会議名, 開催地, 会期, 主催者等)(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | 2013 MRS Spring Meeting (April 1-5, 2013.), San Francisco, California, United States. | |||||
抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | CIGS solar cells were irradiated with 250 keV electrons, which can create only Cu-related defects in the cell, to reveal the radiation defect. The EL image of CIGS solar cells before electron irradiation at 120 K described small grains, thought to be those of the CIGS. After 250 keV electron irradiation of the CIGS cell, the cell was uniformly illuminated compared to before the electron irradiation and the observed grains were unclear. In addition, the EL intensity rose with increasing electron fluence, meaning the change in EL efficiency may be attributable to the decreased likelihood of non-irradiative recombination in intrinsic defects due to electron-induced defects. Since the light soaking effect for CIGS solar cells is reported the same phenomena, the 250 keV electron radiation effects for CIGS solar cells might be equivalent to the effect. | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1557/opl.2013.981 | |||||
関連名称 | info:doi/10.1557/opl.2013.981 | |||||
権利 | ||||||
権利情報 | (C) 2013 Materials Research Society | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: PA1410047000 |