Fujitsu Laboratories Ltd
Fujitsu Laboratories Ltd
National Space Development Agency of Japan
National Space Development Agency of Japan
National Space Development Agency of Japan
出版者
宇宙開発事業団
出版者（英）
National Space Development Agency of Japan (NASDA)
In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method is currently under way for space experiments. In a sample configuration with an InAs crystal sandwiched between GaAs seed and feed crystals, the x-value of growing In(x)Ga(1-x)As crystal is increased from 0.03 to 0.3 before maintaining at 0.3 for several miilimeters of growth. As this year has progressed, the length of single crystalline In(0.3)Ga(0.7)As has been increased from 4 to 6 mm, the spread of the x value in an In(0.3)Ga(0.7)As layer reduced from +/- 0.01 to +/- 0.005, and the length of polycrystalline In(0.3)Ga(0.7)As increased from 18 to 20 mm. Since the required length of seed crystals in space experiments is 20 mm, the length of the single crystalline In(0.3)Ga(0.7)As has to be increased.
In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method, 2
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