Kyoto Institute of Technology Dept. of Electronics and Information Science, Faculty of Engineering and Design
Kyoto Institute of Technology Dept. of Electronics and Information Science, Faculty of Engineering and Design
Kyoto Institute of Technology Venture Laboratory
Kyoto Institute of Technology Dept. of Electronics and Information Science, Faculty of Engineering and Design
Sumitomo Electric Industries Ltd. Itami Research Laboratories
National Space Development Agency of Japan
National Space Development Agency of Japan
出版者
宇宙開発事業団
出版者（英）
National Space Development Agency of Japan (NASDA)
雑誌名
宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals
雑誌名(英)
NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystals
ページ
73 - 79
発行年
2002-12-27
抄録（英）
A computer-controlled scanning photoluminescence (PL) mapping system has been developed to investigate the two-dimensional variation of composition in bulk In(x)Ga(1-x)As crystals. The accuracy of PL results was confirmed by comparing with those obtained from the standard technique of chemical analysis. It was also confirmed that PL results were not limited by the sample size, shape and surface conditions. Besides the compositional homogeneity examination, the usefulness of PL peak intensity map was also found to check the crystallinity in In(x)Ga(1-x)As crystals.
Two-dimensional mapping of composition in I[lc]n(x)G[lc]a(1-x)A[lc]s using photoluminescence
45402006.pdf
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