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Proton Irradiation Effects on Amorphous Silicon Triple-Junction Solar Cells
https://jaxa.repo.nii.ac.jp/records/4303
https://jaxa.repo.nii.ac.jp/records/4303c470ae11-2553-41ac-97c1-00bc3b375309
名前 / ファイル | ライセンス | アクション |
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61889009.pdf (254.4 kB)
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Item type | 会議発表論文 / Conference Paper(1) | |||||
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公開日 | 2015-03-26 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Proton Irradiation Effects on Amorphous Silicon Triple-Junction Solar Cells | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Thin Film Si Solar Cell | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Radiation Effects | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Proton Irradiation | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
資源タイプ | conference paper | |||||
著者 |
Sato, Shinichiro
× Sato, Shinichiro× Beernink, Kevin× Oshima, Takeshi× Sato, Shinichiro× Beernink, Kevin× Oshima, Takeshi |
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著者所属 | ||||||
日本原子力研究開発機構(JAEA) | ||||||
著者所属 | ||||||
United Solar Ovonic LLC | ||||||
著者所属 | ||||||
日本原子力研究開発機構(JAEA) | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Atomic Energy Agency (JAEA) | ||||||
著者所属(英) | ||||||
en | ||||||
United Solar Ovonic LLC | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Atomic Energy Agency (JAEA) | ||||||
出版者 | ||||||
出版者 | 宇宙航空研究開発機構(JAXA) | |||||
出版者(英) | ||||||
出版者 | Japan Aerospace Exploration Agency (JAXA) | |||||
書誌情報 |
宇宙航空研究開発機構特別資料 en : JAXA Special Publication 巻 JAXA-SP-12-008E, p. 46-49, 発行日 2013-03-29 |
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抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Degradation behavior of a-Si/a-SiGe/a-SiGe triple-junction solar cells irradiated with various energy protons are investigated in situ. It is clarified that the degradation due to proton irradiation is scaled by a unit of displacement damaged dose and thus the proton induced degradation is mainly caused by the displacement damage effect. The performance recoveries immediately after irradiation are also investigated and it is clarified that all the parameters recover significantly at room temperature. In particular, the remarkable recovery is observed in the short circuit current. This is thought to be due to recovery of the carrier lifetime, which is based on annealing of radiation defects. | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 形態: カラー図版あり | |||||
内容記述(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Physical characteristics: Original contains color illustrations | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1349-113X | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA11984031 | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: AA0061889009 | |||||
レポート番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | レポート番号: JAXA-SP-12-008E |