Japan Atomic Energy Agency (JAEA)
Japan Atomic Energy Agency (JAEA)
Japan Atomic Energy Agency (JAEA)
Central Research Institute of Electric Power Industry (CRIEPI)
Central Research Institute of Electric Power Industry (CRIEPI)
Central Research Institute of Electric Power Industry (CRIEPI)
出版者
宇宙航空研究開発機構(JAXA)
出版者（英）
Japan Aerospace Exploration Agency (JAXA)
雑誌名
宇宙航空研究開発機構特別資料
雑誌名(英)
JAXA Special Publication
巻
JAXA-SP-12-008E
ページ
64 - 67
発行年
2013-03-29
抄録（英）
Thermal annealing effects on the charge collection efficiency (CCE) of an electron-irradiated4H silicon carbide Schottky barrier diode (SBD) particle detector have been studied.The CCE of the SBD detector is degraded by 1 MeV electrons with a fluence of 1×10(exp15) cm(exp-2). The degraded CCE recovers with low temperature annealing up to 300C. However, CCE starts to decrease again by annealing at 350C. Conventional electrical characterization such as current and capacitance vs voltage measurements, deep level transient spectroscopy used to understand the CCE variation on annealing is discussed.
内容記述
形態: カラー図版あり
内容記述（英）
Physical characteristics: Original contains color illustrations
Annealing Effects on Charge Collection Efficiency of an Electron Irradiated 4H-SiC Particle Detector
61889013.pdf
(316.39KB)
