Japan Atomic Energy Agency (JAEA)
University of Tokushima
Japan Atomic Energy Agency (JAEA)
Japan Atomic Energy Agency (JAEA)
Central Research Institute of Electric Power Industry (CRIEPI)
Central Research Institute of Electric Power Industry (CRIEPI)
Japan Atomic Energy Agency (JAEA)
出版者
宇宙航空研究開発機構(JAXA)
出版者（英）
Japan Aerospace Exploration Agency (JAXA)
雑誌名
宇宙航空研究開発機構特別資料
雑誌名(英)
JAXA Special Publication
巻
JAXA-SP-12-008E
ページ
68 - 71
発行年
2013-03-29
抄録（英）
Heavy ion induced anomalous charge collection was observed in 4H-SiC Schottky Barrier Diodes (SBDs). This result is a new process of Single Event Burnouts (SEBs) in the case of incident ions on SiC-SBDs. It is suggested that the range of the incident ions with respect to the thickness of the epi-layer, ion energy, and electric-field intensity of the SBD is key to understanding this observation and understanding the SEB mechanism.
内容記述
形態: カラー図版あり
内容記述（英）
Physical characteristics: Original contains color illustrations
Heavy-Ion Induced Charge Enhancement in 4H-SiC Schottky Barrier Diodes
61889014.pdf
(286.68KB)
