Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences
Northwest Institution of Nuclear Technology
State Key Laboratory of Electronic Thin Films and Integrated Device, University of Electronic Science and Technology of China
著者所属（英）
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Northwest Institution of Nuclear Technology
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences
Northwest Institution of Nuclear Technology
State Key Laboratory of Electronic Thin Films and Integrated Device, University of Electronic Science and Technology of China
出版者
宇宙航空研究開発機構(JAXA)
出版者（英）
Japan Aerospace Exploration Agency (JAXA)
雑誌名
宇宙航空研究開発機構特別資料
雑誌名(英)
JAXA Special Publication
巻
JAXA-SP-12-008E
ページ
76 - 79
発行年
2013-03-29
抄録（英）
This paper presents 3-D simulation of angled strike heavy ion induced charge collection in Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs). We select several different striking angles at various typical ion strike positions. The charge collection mechanism for each terminal is identified based on analysis of the device structure and simulation results. Angled strike ions induced charge collection present complex situation. With the change of striking angle, the longer the length of the ions track in sensitive volume, the more charge is collected. STI will prevent a part of diffused charge that charge collection reduces.
内容記述
形態: カラー図版あり
著者人数: 11名
内容記述（英）
Physical characteristics: Original contains color illustrations
Number of authors: 11
3-D Simulation of Angled Strike Heavy-Ion Induced Charge Collection in SiGe HBTs
61889016.pdf
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