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Evaluation of SiC Power Diodes against Terrestrial Neutron-Induced Failure at Ground Level
https://jaxa.repo.nii.ac.jp/records/4329
https://jaxa.repo.nii.ac.jp/records/43290016f9ac-4505-4abb-89f7-3675c3882c0c
名前 / ファイル | ライセンス | アクション |
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61889035.pdf (220.0 kB)
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Item type | 会議発表論文 / Conference Paper(1) | |||||
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公開日 | 2015-03-26 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Evaluation of SiC Power Diodes against Terrestrial Neutron-Induced Failure at Ground Level | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Silicon Carbide (SiC) | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Terrestrial Neutron | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Single-Event Burnout (SEB) | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | RCNP | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | LANSCE/WNR | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
資源タイプ | conference paper | |||||
著者 |
Asai, Hiroaki
× Asai, Hiroaki× Sugimoto, Kenji× Nashiyama, Isamu× Shiba, Kensuke× Matsuda, Mieko× Morimura, Tadaaki× Asai, Hiroaki× Sugimoto, Kenji× Nashiyama, Isamu× Shiba, Kensuke× Matsuda, Mieko× Morimura, Tadaaki |
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著者所属 | ||||||
HIREC株式会社 | ||||||
著者所属 | ||||||
HIREC株式会社 | ||||||
著者所属 | ||||||
HIREC株式会社 | ||||||
著者所属 | ||||||
HIREC株式会社 | ||||||
著者所属 | ||||||
HIREC株式会社 | ||||||
著者所属 | ||||||
HIREC株式会社 | ||||||
著者所属(英) | ||||||
en | ||||||
High-Reliability Engineering & Components Corporation (HIREC) | ||||||
著者所属(英) | ||||||
en | ||||||
High-Reliability Engineering & Components Corporation (HIREC) | ||||||
著者所属(英) | ||||||
en | ||||||
High-Reliability Engineering & Components Corporation (HIREC) | ||||||
著者所属(英) | ||||||
en | ||||||
High-Reliability Engineering & Components Corporation (HIREC) | ||||||
著者所属(英) | ||||||
en | ||||||
High-Reliability Engineering & Components Corporation (HIREC) | ||||||
著者所属(英) | ||||||
en | ||||||
High-Reliability Engineering & Components Corporation (HIREC) | ||||||
出版者 | ||||||
出版者 | 宇宙航空研究開発機構(JAXA) | |||||
出版者(英) | ||||||
出版者 | Japan Aerospace Exploration Agency (JAXA) | |||||
書誌情報 |
宇宙航空研究開発機構特別資料 en : JAXA Special Publication 巻 JAXA-SP-12-008E, p. 162-165, 発行日 2013-03-29 |
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抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Terrestrial neutrons cause single-event effects (SEEs) in semiconductor devices, which crucially affect the reliability of electronic systems used in the terrestrial environment. This paper presents evaluation results of high energy neutron-induced single-event burnout (SEB) in silicon carbide (SiC) power diodes and differences between SiC and silicon (Si) devices from the SEB standpoint. | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 形態: カラー図版あり | |||||
内容記述(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Physical characteristics: Original contains color illustrations | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1349-113X | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA11984031 | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: AA0061889035 | |||||
レポート番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | レポート番号: JAXA-SP-12-008E |