Kumamoto National College of Technology
Kumamoto National College of Technology
Kumamoto National College of Technology
Kumamoto National College of Technology
Chuo Denshi Kogyo co., Ltd. : University of Miyazaki
出版者
宇宙航空研究開発機構(JAXA)
出版者（英）
Japan Aerospace Exploration Agency (JAXA)
雑誌名
宇宙航空研究開発機構特別資料
雑誌名(英)
JAXA Special Publication
巻
JAXA-SP-12-008E
ページ
189 - 192
発行年
2013-03-29
抄録（英）
The radiation tolerance by 2 MeV electrons irradiated to the commercial-off-the-shelf (COTS) p- and n-JFETs was studied. For the situation of p-JFET, the drain current (ID) of the input characteristics decreased by electron irradiation. The ID decreasing attributed to the increase of channel resistance by electron irradiation. In contrast, for n-JFET, the ID decreases at the fluence lower than 1x10(exp15) e/cm2, then the ID increases at the fluence higher than 5x10(exp15) e/cm2. The anomalous ID behavior of n-JFET could be explained by considering extending and narrowing of the n-channel.
内容記述
形態: カラー図版あり
内容記述（英）
Physical characteristics: Original contains color illustrations
Difference of radiation tolerance with p-and n-type JFETs
61889040.pdf
(425.37KB)
