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Difference of radiation tolerance with p-and n-type JFETs
https://jaxa.repo.nii.ac.jp/records/4334
https://jaxa.repo.nii.ac.jp/records/4334a6137587-de64-4ce3-b779-b5d249a3af48
名前 / ファイル | ライセンス | アクション |
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61889040.pdf (425.4 kB)
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Item type | 会議発表論文 / Conference Paper(1) | |||||
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公開日 | 2015-03-26 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Difference of radiation tolerance with p-and n-type JFETs | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | COTS device | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | electron irradiation degradation | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | junction field effect transistor | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | electrical | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
資源タイプ | conference paper | |||||
著者 |
Takakura, K.
× Takakura, K.× Sakiyama, S.× Tsunoda, I.× Yoneoka, M.× Nakashima, T.× Takakura, K.× Sakiyama, S.× Tsunoda, I.× Yoneoka, M.× Nakashima, T. |
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著者所属 | ||||||
熊本高等専門学校 | ||||||
著者所属 | ||||||
熊本高等専門学校 | ||||||
著者所属 | ||||||
熊本高等専門学校 | ||||||
著者所属 | ||||||
熊本高等専門学校 | ||||||
著者所属 | ||||||
中央電子工業株式会社 : 宮崎大学 | ||||||
著者所属(英) | ||||||
en | ||||||
Kumamoto National College of Technology | ||||||
著者所属(英) | ||||||
en | ||||||
Kumamoto National College of Technology | ||||||
著者所属(英) | ||||||
en | ||||||
Kumamoto National College of Technology | ||||||
著者所属(英) | ||||||
en | ||||||
Kumamoto National College of Technology | ||||||
著者所属(英) | ||||||
en | ||||||
Chuo Denshi Kogyo co., Ltd. : University of Miyazaki | ||||||
出版者 | ||||||
出版者 | 宇宙航空研究開発機構(JAXA) | |||||
出版者(英) | ||||||
出版者 | Japan Aerospace Exploration Agency (JAXA) | |||||
書誌情報 |
宇宙航空研究開発機構特別資料 en : JAXA Special Publication 巻 JAXA-SP-12-008E, p. 189-192, 発行日 2013-03-29 |
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抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | The radiation tolerance by 2 MeV electrons irradiated to the commercial-off-the-shelf (COTS) p- and n-JFETs was studied. For the situation of p-JFET, the drain current (ID) of the input characteristics decreased by electron irradiation. The ID decreasing attributed to the increase of channel resistance by electron irradiation. In contrast, for n-JFET, the ID decreases at the fluence lower than 1x10(exp15) e/cm2, then the ID increases at the fluence higher than 5x10(exp15) e/cm2. The anomalous ID behavior of n-JFET could be explained by considering extending and narrowing of the n-channel. | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 形態: カラー図版あり | |||||
内容記述(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Physical characteristics: Original contains color illustrations | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1349-113X | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA11984031 | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: AA0061889040 | |||||
レポート番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | レポート番号: JAXA-SP-12-008E |