WEKO3
アイテム
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Investigation on polycrystallization mechanism at initial interfaces in In(x)Ga(1-x)As (x is approximately 0.3) bulk crystals on lattice mismatched seeds
https://jaxa.repo.nii.ac.jp/records/6091
https://jaxa.repo.nii.ac.jp/records/60913426da34-f614-46e0-8d4f-2060ff02198e
名前 / ファイル | ライセンス | アクション |
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49798003.pdf (3.1 MB)
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Item type | テクニカルレポート / Technical Report(1) | |||||
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公開日 | 2015-03-26 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Investigation on polycrystallization mechanism at initial interfaces in In(x)Ga(1-x)As (x is approximately 0.3) bulk crystals on lattice mismatched seeds | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 多結晶 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | InGaAs | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 飽和溶融帯移動法 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 光通信 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | フォトルミネッセンス | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 結晶成長 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 単結晶 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 多結晶化 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 結晶格子 | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | polycrystal | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | InGaAs | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | traveling liquidus zone method | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | optical communication | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | photoluminescence | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | crystal growth | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | single crystal | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | polycrystallization | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | crystal lattice | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_18gh | |||||
資源タイプ | technical report | |||||
著者 |
宮田, 浩旭
× 宮田, 浩旭× 緒方, 康行× 足立, 聡× 鶴, 哲也× 村松, 祐治× 木下, 恭一× 小田原, 修× 依田, 眞一× Miyata, Hiroaki× Ogata, Yasuyuki× Adachi, Satoshi× Tsuru, Tetsuya× Muramatsu, Yuji× Kinoshita, Kyoichi× Odawara, Osamu× Yoda, Shinichi |
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著者所属 | ||||||
エイ・イー・エス | ||||||
著者所属 | ||||||
宇宙航空研究開発機構 宇宙科学研究本部 | ||||||
著者所属 | ||||||
宇宙航空研究開発機構 宇宙科学研究本部 | ||||||
著者所属 | ||||||
エイ・イー・エス | ||||||
著者所属 | ||||||
エイ・イー・エス | ||||||
著者所属 | ||||||
宇宙航空研究開発機構 宇宙科学研究本部 | ||||||
著者所属 | ||||||
東京工業大学 | ||||||
著者所属 | ||||||
宇宙航空研究開発機構 宇宙科学研究本部 | ||||||
著者所属(英) | ||||||
en | ||||||
Advanced Engineering Services Co. Ltd. | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency Institute of Space and Astronautical Science | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency Institute of Space and Astronautical Science | ||||||
著者所属(英) | ||||||
en | ||||||
Advanced Engineering Services Co. Ltd. | ||||||
著者所属(英) | ||||||
en | ||||||
Advanced Engineering Services Co. Ltd. | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency Institute of Space and Astronautical Science | ||||||
著者所属(英) | ||||||
en | ||||||
Tokyo Institute of Technology | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency Institute of Space and Astronautical Science | ||||||
出版者 | ||||||
出版者 | 宇宙航空研究開発機構 | |||||
出版者(英) | ||||||
出版者 | Japan Aerospace Exploration Agency (JAXA) | |||||
書誌情報 |
宇宙航空研究開発機構特別資料 en : JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals 巻 JAXA-SP-05-036E, p. 13-20, 発行日 2006-03-31 |
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抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | In the growth of In(0.3)Ga(0.7)As single crystals, polycrystallization at the initial interface with lattice-mismatched seeds is a major problem because no homogeneous In(0.3)Ga(0.7)As seed crystals have been obtained and usually GaAs crystals are used as seeds. Hence, a mechanism of polycrystallization at the initial interface was investigated. In this paper, a local misfit stress at the interface is calculated. Then it is compared with the critical resolved shear stress (CRSS). It was determined that the polycrystallization at the initial interface is related to the magnitude of the misfit stress and to that of the CRSS. We discuss growth of larger In(0.3)Ga(0.7)As single crystals by avoiding the polycrystallization at the initial interface. | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1349-113X | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA11984031 | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: AA0049798003 | |||||
レポート番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | レポート番号: JAXA-SP-05-036E |