charge density distribution, Teflon, charge accumulation, numerical simulation, Monte Carlo method, electron scattering, atomic collision, spacecraft charging, dielectric, electric breakdown
Musashi Institute of Technology Department of Mechanical Systems Engineering, Faculty of Engineering
Musashi Institute of Technology Department of Mechanical Systems Engineering, Faculty of Engineering
Musashi Institute of Technology Department of Mechanical Systems Engineering, Faculty of Engineering
Musashi Institute of Technology Department of Mechanical Systems Engineering, Faculty of Engineering
出版者
宇宙航空研究開発機構
出版者（英）
Japan Aerospace Exploration Agency (JAXA)
雑誌名
宇宙航空研究開発機構特別資料
雑誌名(英)
JAXA Special Publication: 9th Spacecraft Charging Technology Conference
巻
JAXA-SP-05-001E
ページ
604 - 610
発行年
2005-08-01
抄録（英）
The charge accumulation processes inside a Teflon film are investigated with one-dimensional Monte-Carlo simulation. Elastic and inelastic scattering processes are considered in the collisions between electrons and atoms consisting of Teflon (CF4). Electron-phonon interaction and trapping effect are also included in the estimation of total cross section. A case of 20 keV electron irradiation is tested and charge accumulation process is successfully simulated. The electric field is also calculated based on the one-dimensional Poisson equations. The formation of strong electric field induced by the electron charge is clearly seen. The computed charge density distributions are compared with other simulation results and experimental data. The innovative measurement technique is used to obtain the charge density distribution inside a Teflon film. A PC based parallel computer is introduced to accelerate the computation so that the realistic time scale is attained.
1D Monte-Carlo simulation of charge accumulation process inside Teflon film
49206067.pdf
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