WEKO3
アイテム
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Cu(In, Ga)Se2太陽電池における陽子線照射欠陥のフォトルミネッセンス解析
https://jaxa.repo.nii.ac.jp/records/8092
https://jaxa.repo.nii.ac.jp/records/80928021594f-1c34-4c7b-9f10-9f09498a4f84
Item type | 会議発表論文 / Conference Paper(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2015-03-26 | |||||
タイトル | ||||||
タイトル | Cu(In, Ga)Se2太陽電池における陽子線照射欠陥のフォトルミネッセンス解析 | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 太陽電池 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 放射線耐性 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 薄膜 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 航空宇宙環境 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 陽子照射 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 熱処理 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | CIGS太陽電池 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 多結晶 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 気相エピタキシー | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | フォトルミネッセンス | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 発光強度 | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | solar cell | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | radiation tolerance | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | thin film | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | aerospace environment | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | proton irradiation | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | heat treatment | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | CIGS solar cell | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | polycrystal | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | vapor phase epitaxy | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | photoluminescence | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | emission intensity | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
資源タイプ | conference paper | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
その他のタイトル(英) | ||||||
その他のタイトル | Photoluminescence analysis of proton-radiation-induced defects in Cu(In, Ga)Se2 solar cells | |||||
著者 |
吉田, 和生
× 吉田, 和生× 田島, 道夫× 曽根, 良嗣× 川北, 史朗× 仁木, 栄× 櫻井, 啓一郎× Yoshida, Kazuki× Tajima, Michio× Sone, Yoshitsugu× Kawakita, Shiro× Niki, Shigeru× Sakurai, Keiichiro |
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著者所属 | ||||||
宇宙航空研究開発機構 宇宙科学研究本部 | ||||||
著者所属 | ||||||
宇宙航空研究開発機構 宇宙科学研究本部 | ||||||
著者所属 | ||||||
宇宙航空研究開発機構 宇宙科学研究本部 | ||||||
著者所属 | ||||||
宇宙航空研究開発機構 総合技術研究本部 | ||||||
著者所属 | ||||||
産業技術総合研究所 電力エネルギー研究部門 | ||||||
著者所属 | ||||||
産業技術総合研究所 電力エネルギー研究部門 | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency Institute of Space and Astronautical Science | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency Institute of Space and Astronautical Science | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency Institute of Space and Astronautical Science | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency Institute of Space Technology and Aeronautics | ||||||
著者所属(英) | ||||||
en | ||||||
National Institute of Advanced Industrial Science and Technology Energy Electronics Institute | ||||||
著者所属(英) | ||||||
en | ||||||
National Institute of Advanced Industrial Science and Technology Energy Electronics Institute | ||||||
出版者 | ||||||
出版者 | 宇宙航空研究開発機構宇宙科学研究本部 | |||||
出版者(英) | ||||||
出版者 | Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA/ISAS) | |||||
書誌情報 |
第24回宇宙エネルギーシンポジウム 平成16年度 en : The Twenty-fourth Space Energy Symposium March 7, 2005 p. 27-31, 発行日 2005-06 |
|||||
抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Cu(In,Ga)Se2 (CIGS) solar cells have the advantages of low weight and high radiation receptivity, which are quite attractive for the space application. The high radiation tolerance has been explained by the recovery effect during low-temperature annealing. However, the process of the radiation degradation and the annealing effect has not yet been clarified. We investigated the radiation-induced defects in poly-crystalline CIGS by photoluminescence (PL) spectroscopy. The proton irradiation degraded the near band-edge (1.1 eV) emission and induced the deep-level emission at 0.8 eV. We suggest that the radiation-induced defects are responsible for the deep-level emission. The heat treatment at 120 C restored the 1.1 eV emission and reduced the 0.8 eV band. After annealing, the intensity of the 1.1 eV emission from CIGS solar cells became higher than that from CIGS thin films. We suggest that this phenomenon is caused by the difference in the surface/interface conditions of the CIGS layers. | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: AA0049120006 |