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Effects of Gravity and Crystal Orientation on the Growth of InGaSb Ternary Alloy Semiconductors: Experiments at the International Space Station and on Earth
https://jaxa.repo.nii.ac.jp/records/21756
https://jaxa.repo.nii.ac.jp/records/21756ba978fba-eaf7-481f-9f61-0038a39873df
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2017-05-19 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Effects of Gravity and Crystal Orientation on the Growth of InGaSb Ternary Alloy Semiconductors: Experiments at the International Space Station and on Earth | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | InGaSb | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | crystal growth | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | gravity | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | crystal orientation | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | ISS | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
早川, 泰弘
× 早川, 泰弘× Nirmal, Kumar Velu× Arivanandhan, Mukannan× Rajesh, Govindasamy× 小山, 忠信× 百瀬, 与志美× 阪田, 薫穂× 小澤, 哲夫× 岡野, 泰則× 稲富, 裕光× Hayakawa, Yasuhiro× Nirmal, Kumar Velu× Arivanandhan, Mukannan× Rajesh, Govindasamy× Koyama, Tadanobu× Momose, Yoshimi× Sakata, Kaoruho× Ozawa, Tetsuo× Okano, Yasunori× Inatomi, Yuko |
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出版者 | ||||||
出版者 | Japan Society of Microgravity Application (JASMA) | |||||
出版者(英) | ||||||
出版者 | 日本マイクログラビティ応用学会(JASMA) | |||||
書誌情報 |
en : International Journal of Microgravity Science and Application (IJMSA) 巻 34, 号 1, p. 340111-1-340111-12, 発行日 2017-01-31 |
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抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | The manuscript reviews the microgravity experiments carried out onboard the International Space Station (ISS) to study the effects of gravity and orientation on the dissolution and growth properties of InGaSb ternary alloys. To study the effect of gravity, similar growth experiments were conducted under microgravity and normal gravity conditions. The effect of orientation was studied by the growth of InGaSb from (111)A and (111)B faces of GaSb (Ga and Sb faces) under microgravity onboard the ISS. The experimental results revealed that the growth rate was higher with better quality of crystal under microgravity than normal gravity. A model was proposed to explain the higher dissolution of GaSb (111)B than (111)A direction under microgravity. The higher growth rate of InGaSb from GaSb (111)B was found to be because of its higher dissolution of GaSb(111)B feed. | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 形態: カラー図版あり | |||||
内容記述(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Physical characteristics: Original contains color illustrations | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0915-3616 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN10537663 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.15011//jasma.34.340111 | |||||
関連名称 | info:doi/10.15011//jasma.34.340111 | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: DS1740126000 |