WEKO3
アイテム
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High quality In(x)Ga(1-x)As (x: 0.1-0.13) platy crystal growth for semiconductor laser substrates
https://jaxa.repo.nii.ac.jp/records/2221
https://jaxa.repo.nii.ac.jp/records/2221bb70b05e-e35f-4a2d-9bf8-ad4a25f199c6
名前 / ファイル | ライセンス | アクション |
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63221000.pdf (4.2 MB)
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Item type | テクニカルレポート / Technical Report(1) | |||||
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公開日 | 2015-03-26 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | High quality In(x)Ga(1-x)As (x: 0.1-0.13) platy crystal growth for semiconductor laser substrates | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 飽和溶融帯移動法 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | TLD法 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | インジウムガリウム砒素 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 結晶成長 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 温度勾配 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 半導体レーザ | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 基板 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 単結晶 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 液相線 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 結晶性 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 濃度プロファイル | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 温度安定性 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 対流 | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | traveling liquidus-zone method | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | TLZ method | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | indium gallium arsenide | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | crystal growth | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | temperature gradient | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | semiconductor laser | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | substrate | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | single crystal | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | liquidus | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | crystallinity | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | concentration profile | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | temperature stability | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | convection | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_18gh | |||||
資源タイプ | technical report | |||||
著者 |
木下, 恭一
× 木下, 恭一× 植田, 稔晃× 足立, 聡× 荒井, 康智× 宮田, 浩旭× 田中, 涼太× 村松, 祐治× 依田, 眞一× Kinoshita, Kyoichi× Ueda, Toshiaki× Adachi, Satoshi× Arai, Yasutomo× Miyata, Hiroaki× Tanaka, Ryota× Muramatsu, Yuji× Yoda, Shinichi |
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著者所属 | ||||||
宇宙航空研究開発機構 宇宙科学研究本部 | ||||||
著者所属 | ||||||
宇宙航空研究開発機構 宇宙科学研究本部 | ||||||
著者所属 | ||||||
宇宙航空研究開発機構 宇宙科学研究本部 | ||||||
著者所属 | ||||||
宇宙航空研究開発機構 宇宙科学研究本部 | ||||||
著者所属 | ||||||
エイ・イー・エス | ||||||
著者所属 | ||||||
エイ・イー・エス | ||||||
著者所属 | ||||||
エイ・イー・エス | ||||||
著者所属 | ||||||
宇宙航空研究開発機構 宇宙科学研究本部 | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency Institute of Space and Astronautical Science | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency Institute of Space and Astronautical Science | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency Institute of Space and Astronautical Science | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency Institute of Space and Astronautical Science | ||||||
著者所属(英) | ||||||
en | ||||||
Advanced Engineering Services Co. Ltd. | ||||||
著者所属(英) | ||||||
en | ||||||
Advanced Engineering Services Co. Ltd. | ||||||
著者所属(英) | ||||||
en | ||||||
Advanced Engineering Services Co. Ltd. | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency Institute of Space and Astronautical Science | ||||||
出版者 | ||||||
出版者 | 宇宙航空研究開発機構 | |||||
出版者(英) | ||||||
出版者 | Japan Aerospace Exploration Agency (JAXA) | |||||
書誌情報 |
宇宙航空研究開発機構研究開発報告 en : JAXA Research and Development Report 巻 JAXA-RR-06-014E, 発行日 2007-03-30 |
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抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | We have succeeded in growing large and high quality platy In(x)Ga(1-x)As (x: 0.1-0.13) single crystals by the Traveling Liquidus-Zone (TLZ) method. Among factors which affect crystal quality, the most influential factor is temperature stability at the growth region when the composition of grown crystals is in the range between In(0.1)Ga(0.9)As and In(0.13)Ga(0.87)As; when the temperature stability was better than +/- 0.1 C, compositional uniformity was 0.13 with sigma of 0.001 where sigma is the standard deviation, and 0.13 with sigma of 0.006 when the temperature stability was +/- 0.2 C. The appropriate temperatures at the feed region were between 1,170 and 1,180 C. Temperature gradient also affected crystal quality through the variation of growth rate. Temperature gradients chosen for high quality crystal growth were in the range between 25 and 28 C/cm, which were measured outside of quartz ampoules. Finally, In(0.13)Ga(0.87)As single crystals having high quality area larger than 10 x 30 sq mm were reproducibly grown. Such large and high quality bulk single crystals which can be used as substrates of laser diodes operating at the wavelength of 1.3 micrometers were grown for the first time. | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1349-1113 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA1192675X | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: AA0063221000 | |||||
レポート番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | レポート番号: JAXA-RR-06-014E |