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Investigation of Single-Event Damages on Silicon Carbide (SiC) Power MOSFETs
https://jaxa.repo.nii.ac.jp/records/22543
https://jaxa.repo.nii.ac.jp/records/22543057fe033-849f-4557-b5ca-53639ae03084
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2015-07-14 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Investigation of Single-Event Damages on Silicon Carbide (SiC) Power MOSFETs | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Heavy ions | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | SiC | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | power MOSFETs | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | radiation damage | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | silicon carbide | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | single-event effects | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Mizuta, Eiichi
× Mizuta, Eiichi× Kuboyama, Satoshi× Abe, Hiroshi× Iwata, Yoshiyuki× Tamura, Takashi |
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著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency(JAXA) | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency(JAXA | ||||||
著者所属(英) | ||||||
en | ||||||
- | ||||||
著者所属(英) | ||||||
en | ||||||
- | ||||||
著者所属(英) | ||||||
en | ||||||
- | ||||||
出版者(英) | ||||||
出版者 | Institute of Electrical and Electronics Engineers, Inc.(IEEE) | |||||
書誌情報 |
en : IEEE Transactions on Nuclear Science 巻 61, 号 4, p. 1924-1928, 発行日 2014-08 |
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抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Radiation effects were demonstrably observed in silicon carbide power MOSFETs caused by heavy ion and proton irradiation. For higher LET ions, permanent damage (increase in both drain and gate leakage current) was observed similar to SiC Schottky Barrier diodes in our previous study. For lower LET ions, including protons, Single Event Burnouts (SEBs) were observed and there was no leakage current increase just before SEBs. The phenomenon is unique for SiC devices. | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0018-9499 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00667999 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1109/TNS.2014.2336911 | |||||
関連名称 | info:doi/10.1109/TNS.2014.2336911 | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: PA1510043000 |