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Detailed results of this period: Growth of homogeneous Si(0.5)Ge(0.5) single crystals by the Traveling Liquidus-Zone Method
https://jaxa.repo.nii.ac.jp/records/2363
https://jaxa.repo.nii.ac.jp/records/2363e69bee76-9d99-497d-b073-4d55850ef5d0
名前 / ファイル | ライセンス | アクション |
---|---|---|
48451001.pdf (1.2 MB)
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Item type | テクニカルレポート / Technical Report(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2015-03-26 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Detailed results of this period: Growth of homogeneous Si(0.5)Ge(0.5) single crystals by the Traveling Liquidus-Zone Method | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 結晶成長 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 飽和溶融帯移動法 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | シリコン化合物 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 液相線 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 結晶性 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 薄膜 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Si-Ge結晶 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 物質拡散 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 拡散係数 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | X線回折 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | ラウエ法 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 成長速度 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 状態図 | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | crystal growth | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | traveling liquidus-zone method | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | silicon compound | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | liquidus | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | crystallinity | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | thin film | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Si-Ge crystal | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | mass transfer | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | diffusion coefficient | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | X-ray diffraction | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Laue method | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | growth rate | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | phase diagram | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_18gh | |||||
資源タイプ | technical report | |||||
その他のタイトル | ||||||
その他のタイトル | 今期の詳細な結果:Traveling Liquidus-Zone法による均一なSi(0.5)Ge(0.5)単結晶の成長 | |||||
著者 |
宮田, 浩旭
× 宮田, 浩旭× 緒方, 康行× 木下, 恭一× 足立, 聡× 依田, 真一× 鶴, 哲也× 村松, 祐治× Miyata, Hiroaki× Ogata, Yasuyuki× Kinoshita, Kyoichi× Adachi, Satoshi× Yoda, Shinichi× Tsuru, Tetsuya× Muramatsu, Yuji |
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著者所属 | ||||||
エイ・イー・エス | ||||||
著者所属 | ||||||
宇宙航空研究開発機構 宇宙科学研究本部 | ||||||
著者所属 | ||||||
宇宙航空研究開発機構 宇宙科学研究本部 | ||||||
著者所属 | ||||||
宇宙航空研究開発機構 宇宙科学研究本部 | ||||||
著者所属 | ||||||
宇宙航空研究開発機構 宇宙科学研究本部 | ||||||
著者所属 | ||||||
エイ・イー・エス | ||||||
著者所属 | ||||||
エイ・イー・エス | ||||||
著者所属(英) | ||||||
en | ||||||
Advanced Engineering Services Co. Ltd. | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency Institute of Space and Astronautical Science | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency Institute of Space and Astronautical Science | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency Institute of Space and Astronautical Science | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency Institute of Space and Astronautical Science | ||||||
著者所属(英) | ||||||
en | ||||||
Advanced Engineering Services Co. Ltd. | ||||||
著者所属(英) | ||||||
en | ||||||
Advanced Engineering Services Co. Ltd. | ||||||
出版者 | ||||||
出版者 | 宇宙航空研究開発機構 | |||||
出版者(英) | ||||||
出版者 | Japan Aerospace Exploration Agency (JAXA) | |||||
書誌情報 |
宇宙航空研究開発機構研究開発報告 en : JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals 巻 JAXA-RR-04-022E, p. 7-13, 発行日 2005-03-31 |
|||||
抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | The Si(0.5)Ge(0.5) bulk crystals growth has been challenged. Si-Ge homogeneous single crystals are difficult to grow so far. In the present research, the Traveling Liquidus-Zone method (TLZ method) which was invented in the group as a new crystal growth method to the growth of Si-Ge has been applied. The diameter of grown crystal was 2 mm and the length was 15 mm. Crystals were well seeded and had the orientation of silicon seeds in spite of the large lattice mismatch. The compositional variation of the crystals was very small and the composition was in the mole fraction range of 0.5 +/- 0.016 in germanium. The lattice constant determined by the X-ray powder diffraction was 55.38 nm. | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1349-1113 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA1192675X | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: AA0048451001 | |||||
レポート番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | レポート番号: JAXA-RR-04-022E |