WEKO3
アイテム
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Moreover, on the case of crystal growth by means of Bridgeman method under microgravity, the study on convection of melts and segregation phenomena were performed, and based on this study, the possibility obtaining the ternary crystal with homogeneous composition by conducting crystal growth under microgravity was investigated. The segregation coefficient of Ga in InGaAs crystal made by HB method on ground surface was 3.2 and the segregation coefficient of Ga in InGaAs made under microgravity was 2.6. In part of the seed crystal, because of thin diameter (4 mm), although it was expected that segregation coefficient would become 1, that is, composition of Ga would become homogeneous, homogenization of Ga composition was not reached. Accordance of these results with the predictions by Camel theory led to the conclusion of that in InGaAs system, it was difficult to homogenize Ga composition even in crystal growth under microgravity. However, when InGaAs crystal in grown by means of VB method, it is found out to be possible to obtain a crystal with homogeneous distribution of Ga composition. The transitional region of Ga concentration was observed in the initial part of this crystal. The phenomenon of homogenization of Ga composition in case of VB method can not be explained by Camel theory. The distribution of Ga concentration in initial transitional part fairly agreed with Tiller theory, and the equilibrium segregation coefficient of Ga was derived to be 3.1 from this theory. This value is fairly coincident with the values calculated from the results of other experiments on crystal growth. However, the diffusion coefficient of Ga in InGaAs melts calculated based on this theory is 4.1x10(exp -5) /sq cm /s. 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"", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 1200000.0, "url": {"label": "04116023.pdf", "url": "https://jaxa.repo.nii.ac.jp/record/41097/files/04116023.pdf"}, "version_id": "43f277b4-2fdd-4fef-84b9-0dd941cf0edb"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "微小重力", "subitem_subject_scheme": "Other"}, {"subitem_subject": "化合物半導体", "subitem_subject_scheme": "Other"}, {"subitem_subject": "結晶成長", "subitem_subject_scheme": "Other"}, {"subitem_subject": "InGaAs半導体", "subitem_subject_scheme": "Other"}, {"subitem_subject": "ブリッジマン法", "subitem_subject_scheme": "Other"}, {"subitem_subject": "融液対流", "subitem_subject_scheme": "Other"}, {"subitem_subject": "偏析係数", "subitem_subject_scheme": "Other"}, {"subitem_subject": "均一性", "subitem_subject_scheme": "Other"}, {"subitem_subject": "化学組成", "subitem_subject_scheme": "Other"}, {"subitem_subject": "3元系結晶", "subitem_subject_scheme": "Other"}, 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無重力環境下における化合物半導体結晶の作製(InGaAsの研究)
https://jaxa.repo.nii.ac.jp/records/41097
https://jaxa.repo.nii.ac.jp/records/41097b27ec9c4-70bd-4ec7-a3db-9a639b4a74da
名前 / ファイル | ライセンス | アクション |
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04116023.pdf (1.2 MB)
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Item type | テクニカルレポート / Technical Report(1) | |||||
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公開日 | 2015-03-26 | |||||
タイトル | ||||||
タイトル | 無重力環境下における化合物半導体結晶の作製(InGaAsの研究) | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 微小重力 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 化合物半導体 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 結晶成長 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | InGaAs半導体 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | ブリッジマン法 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 融液対流 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 偏析係数 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 均一性 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 化学組成 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 3元系結晶 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | ガリウム濃度 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 濃度遷移領域 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Tiller理論 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Camel理論 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | ガリウム拡散係数 | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | microgravity | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | compound semiconductor | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | crystal growth | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | InGaAs semiconductor | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Bridgeman method | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | melt convection | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | segregation coefficient | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | homogeneity | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | chemical composition | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | ternary crystal | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | gallium concentration | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | concentration transitional region | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Tiller theory | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Camel theory | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | gallium diffusion coefficient | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_18gh | |||||
資源タイプ | technical report | |||||
その他のタイトル(英) | ||||||
その他のタイトル | Crystal growth of compound semiconductor under microgravity | |||||
著者 |
龍見, 雅美
× 龍見, 雅美× 村井, 重夫× 白川, 二× 荒木, 高志× 藤原, 伸介× Tatsumi, Masami× Murai, Shigeo× Shirakawa, Tsuguru× Araki, Takashi× Fujiwara, Shinsuke |
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著者所属 | ||||||
住友電気工業 | ||||||
著者所属 | ||||||
住友電気工業 | ||||||
著者所属 | ||||||
住友電気工業 | ||||||
著者所属 | ||||||
住友電気工業 | ||||||
著者所属 | ||||||
住友電気工業 | ||||||
著者所属(英) | ||||||
en | ||||||
Sumitomo Electric Industries Co | ||||||
著者所属(英) | ||||||
en | ||||||
Sumitomo Electric Industries Co | ||||||
著者所属(英) | ||||||
en | ||||||
Sumitomo Electric Industries Co | ||||||
著者所属(英) | ||||||
en | ||||||
Sumitomo Electric Industries Co | ||||||
著者所属(英) | ||||||
en | ||||||
Sumitomo Electric Industries Co | ||||||
出版者 | ||||||
出版者 | 宇宙開発事業団 | |||||
出版者(英) | ||||||
出版者 | National Space Development Agency of Japan (NASDA) | |||||
書誌情報 |
宇宙開発事業団技術報告 en : NASDA Technical Memorandum p. 952-978, 発行日 1994-10-20 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | 3元系化合物半導体であるIn(1-x)Ga(x)As;x=0.03結晶を、地上で水平ブリッジマン法(HB法)と垂直ブリッジマン法(VB法)を用いて成長させた。さらに微小重力環境下においてブリッジマン法で成長させることによって、融液対流と偏析現象に関する研究を行った。そして微小重力環境下で結晶成長を行うことによる、均一な組成を持った3元系結晶育成の可能性を調査した。地上でHB法で成長したInGaAs結晶中のGaの偏析係数は3.2であり、微小重力環境下で成長した結晶中のGaの偏析係数は2.6であった。種結晶部では直径が細い(4mm)ため、偏析係数が1になること、すなわちGa組成が均一になることが期待されていたが、Ga組成の均一化は得られなかった。これらの結果はCamelの予測と一致し、InGaAsの系では、微小重力環境下での結晶成長においてさえ、Ga組成の均一化が困難であるという結論を得た。しかしながら、InGaAs結晶をVB法で成長させれば、均一なGa組成分布を持つ結晶を育成できることを見いだした。この結晶の成長初期部には、Ga濃度の遷移領域が観察された。VB法でのGa組成の均一化は、Camelの理論では説明できない。初期の遷移領域のGa濃度分布は、Tillerの理論に良く一致し、この理論からGaの平衡偏析係数として3.1を得た。この値は、他の結晶成長実験から算出した値と、良い一致を示す。しかしながら、この理論から算出したInGaAs融液中のGaの拡散係数は4.1x10{-5}/s平方センチメートルであり、他の実験から求めた値の約3倍であった。 | |||||
抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Crystal growth of In(1-x)Ga(x)As (x = 0.03) ternary compound semiconductor was carried out by using Horizontal Bridgeman (HB) method and Vertical Bridgeman (VB) method on ground surface. Moreover, on the case of crystal growth by means of Bridgeman method under microgravity, the study on convection of melts and segregation phenomena were performed, and based on this study, the possibility obtaining the ternary crystal with homogeneous composition by conducting crystal growth under microgravity was investigated. The segregation coefficient of Ga in InGaAs crystal made by HB method on ground surface was 3.2 and the segregation coefficient of Ga in InGaAs made under microgravity was 2.6. In part of the seed crystal, because of thin diameter (4 mm), although it was expected that segregation coefficient would become 1, that is, composition of Ga would become homogeneous, homogenization of Ga composition was not reached. Accordance of these results with the predictions by Camel theory led to the conclusion of that in InGaAs system, it was difficult to homogenize Ga composition even in crystal growth under microgravity. However, when InGaAs crystal in grown by means of VB method, it is found out to be possible to obtain a crystal with homogeneous distribution of Ga composition. The transitional region of Ga concentration was observed in the initial part of this crystal. The phenomenon of homogenization of Ga composition in case of VB method can not be explained by Camel theory. The distribution of Ga concentration in initial transitional part fairly agreed with Tiller theory, and the equilibrium segregation coefficient of Ga was derived to be 3.1 from this theory. This value is fairly coincident with the values calculated from the results of other experiments on crystal growth. However, the diffusion coefficient of Ga in InGaAs melts calculated based on this theory is 4.1x10(exp -5) /sq cm /s. This value is three times of the value calculated from other experiments. | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1345-7888 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN00364784 | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: AA0004116023 | |||||
レポート番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | レポート番号: NASDA-TMR-940002 V.2 |