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Preparation of InGaAs starting materials having the gradient InAs concentration
https://jaxa.repo.nii.ac.jp/records/41999
https://jaxa.repo.nii.ac.jp/records/41999914a6596-d822-47b2-be07-bd5daeefdf73
名前 / ファイル | ライセンス | アクション |
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29300006.pdf (961.1 kB)
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Item type | テクニカルレポート / Technical Report(1) | |||||
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公開日 | 2015-03-26 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Preparation of InGaAs starting materials having the gradient InAs concentration | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | InGaAs | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 出発材料 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 方向性固化法 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 過冷却 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 核生成 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 成長界面 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 蛍光X線法 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 微視的にスムーズな濃度 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | In組成 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 成長実験 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 微視的評価 | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | InGaAs | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | starting material | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | directional solidification method | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | supercooling | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | nucleation | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | growth interface | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | fluorescent X ray method | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | microscopically smooth concentration | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | In composition | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | growth experiment | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | microscopic evaluation | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_18gh | |||||
資源タイプ | technical report | |||||
その他のタイトル | ||||||
その他のタイトル | InAs濃度勾配のあるInGaAs出発物質の準備 | |||||
著者 |
龍見, 雅美
× 龍見, 雅美× 加藤, 浩和× 木下, 恭一× Tatsumi, Masami× Kato, Hirokazu× Kinoshita, Kyoichi |
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著者所属 | ||||||
住友電気工業 伊丹研究所 | ||||||
著者所属 | ||||||
宇宙開発事業団 宇宙環境利用研究センター | ||||||
著者所属 | ||||||
宇宙開発事業団 宇宙環境利用研究センター | ||||||
著者所属(英) | ||||||
en | ||||||
Sumitomo Electric Industries Ltd Itami Research Laboratories | ||||||
著者所属(英) | ||||||
en | ||||||
National Space Development Agency of Japan Space Utilization Research Center | ||||||
著者所属(英) | ||||||
en | ||||||
National Space Development Agency of Japan Space Utilization Research Center | ||||||
出版者 | ||||||
出版者 | 宇宙開発事業団 | |||||
出版者(英) | ||||||
出版者 | National Space Development Agency of Japan (NASDA) | |||||
書誌情報 |
en : NASDA Technical Memorandum p. 55-59, 発行日 2000-09-29 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | InAs濃度勾配のあるInGaAs出発物質を方向性固化法で準備した。材料は過冷却をおこすことなく、巨視的微視的になめらかな濃度分布を持っていた。成長実験のためのIn成分xが0.3の試料は、x=0.4の材料物質から切り出した。過冷却領域でのIn濃度の微視的評価は、自由核生成が成長界面の前で起こり、新たな成長界面が形成されることを示唆していた。 | |||||
抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | InGaAs starting materials having gradient InAs concentrations were prepared by the directionally solidification method. The materials have macro and microscopically smooth concentration profile without occurrence of a constitutional supercooling. The sample having In composition (x) of 0.3 for growth experiments was cut from the source materials having x = 0.4. The microscopic evaluation of In concentration on a region of the constitutional supercooling suggests that free nucleations occur ahead of a growth interface and a new growth interface is formed. | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1345-7888 | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: AA0029300006 | |||||
レポート番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | レポート番号: NASDA-TMR-000007E |