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Quantitative modeling of the traveling liquidus-zone method
https://jaxa.repo.nii.ac.jp/records/42545
https://jaxa.repo.nii.ac.jp/records/4254561258c20-f718-4113-9678-a11cf66bdf1d
名前 / ファイル | ライセンス | アクション |
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32602002.pdf (1.6 MB)
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Item type | テクニカルレポート / Technical Report(1) | |||||
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公開日 | 2015-03-26 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Quantitative modeling of the traveling liquidus-zone method | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 移行液相ゾーン法 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 定量的モデル解析 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 結晶成長 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 半導体 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 均質性 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 温度勾配 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | In(sub x)Ga(sub 1-x)As | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | traveling liquidus zone method | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | quantitative model analysis | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | crystal growth | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | semiconductor | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | homogeneity | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | temperature gradient | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | In(sub x)Ga(sub 1 minus x)As | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_18gh | |||||
資源タイプ | technical report | |||||
その他のタイトル | ||||||
その他のタイトル | 移行液相ゾーン法の定量的モデリング | |||||
著者 |
中村, 裕彦
× 中村, 裕彦× 花上, 康宏× 木下, 恭一× 依田, 真一× Nakamura, Hirohiko× Hanaue, Yasuhiro× Kinoshita, Kyoichi× Yoda, Shinichi |
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著者所属 | ||||||
宇宙開発事業団 | ||||||
著者所属 | ||||||
宇宙開発事業団 宇宙環境利用研究センター | ||||||
著者所属 | ||||||
宇宙開発事業団 宇宙環境利用研究システム | ||||||
著者所属 | ||||||
宇宙開発事業団 宇宙環境利用研究システム | ||||||
著者所属(英) | ||||||
en | ||||||
National Space Development Agency of Japan | ||||||
著者所属(英) | ||||||
en | ||||||
National Space Development Agency of Japan Space Utilization Research Center | ||||||
著者所属(英) | ||||||
en | ||||||
National Space Development Agency of Japan Space Utilization Research Program | ||||||
著者所属(英) | ||||||
en | ||||||
National Space Development Agency of Japan Space Utilization Research Program | ||||||
出版者 | ||||||
出版者 | 宇宙開発事業団 | |||||
出版者(英) | ||||||
出版者 | National Space Development Agency of Japan (NASDA) | |||||
書誌情報 |
宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals en : NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals p. 19-40, 発行日 2001-12-25 |
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抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Traveling Liquidus-Zone (TLZ) Method, which was developed by NASDA, is a powerful method to grow compositionally homogeneous semiconductor mixed crystals. Experimentally, successful results have been obtained in the laboratory. However, there was no quantitative model, which explains the homogeneous growth mechanism or the applicability of the method. In the present study, one-dimensional quantitative model of the TLZ method has been developed. Some representative results such as a synchronized sample translation rate, maximum growth length, time sequence of the liquidus zone width, and limitation of the TLZ method due to the restriction of the initial zone length, have been calculated using the model. Consequently, quantitative evaluation of TLZ growth conditions became possible. | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1345-7888 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN00364784 | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: AA0032602002 | |||||
レポート番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | レポート番号: NASDA-TMR-010016E |