WEKO3
アイテム
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Constitutional supercooling in the crystal growth of In(x)Ga(1-x)As
https://jaxa.repo.nii.ac.jp/records/42958
https://jaxa.repo.nii.ac.jp/records/4295881236965-57a2-44bf-ab04-370bcc0e1be7
名前 / ファイル | ライセンス | アクション |
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46981002.pdf (2.0 MB)
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Item type | テクニカルレポート / Technical Report(1) | |||||
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公開日 | 2015-03-26 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Constitutional supercooling in the crystal growth of In(x)Ga(1-x)As | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 結晶成長 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | TLZ法 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | In(x)Ga(1-x)As | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 過冷却 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 凍結 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 温度勾配 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 対流 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | メルト | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | crystal growth | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | TLZ method | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | In(x)Ga(1-x)As | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | supercooling | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | freezing | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | temperature gradient | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | convection | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | melt | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_18gh | |||||
資源タイプ | technical report | |||||
その他のタイトル | ||||||
その他のタイトル | In(x)Ga(1-x)As結晶成長における組性過冷却 | |||||
著者 |
木下, 恭一
× 木下, 恭一× 緒方, 康行× 越川, 尚清× 足立, 聡× 岩井, 正行× 鶴, 哲也× 村松, 祐治× 杉木, 喜洋× 前川, 透× 依田, 真一× Kinoshita, Kyoichi× Ogata, Yasuyuki× Koshikawa, Naokiyo× Adachi, Satoshi× Iwai, Masayuki× Tsuru, Tetsuya× Muramatsu, Yuji× Sugiki, Yoshihiro× Maekawa, Toru× Yoda, Shinichi |
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著者所属 | ||||||
宇宙開発事業団 宇宙環境利用研究システム | ||||||
著者所属 | ||||||
宇宙開発事業団 宇宙環境利用研究センター | ||||||
著者所属 | ||||||
宇宙開発事業団 宇宙環境利用研究センター | ||||||
著者所属 | ||||||
宇宙開発事業団 宇宙環境利用研究センター | ||||||
著者所属 | ||||||
エイ・イー・エス | ||||||
著者所属 | ||||||
エイ・イー・エス | ||||||
著者所属 | ||||||
エイ・イー・エス | ||||||
著者所属 | ||||||
東洋大学 | ||||||
著者所属 | ||||||
東洋大学 | ||||||
著者所属 | ||||||
宇宙開発事業団 宇宙環境利用研究システム | ||||||
著者所属(英) | ||||||
en | ||||||
National Space Development Agency of Japan Space Utilization Research Program | ||||||
著者所属(英) | ||||||
en | ||||||
National Space Development Agency of Japan Space Utilization Research Center | ||||||
著者所属(英) | ||||||
en | ||||||
National Space Development Agency of Japan Space Utilization Research Center | ||||||
著者所属(英) | ||||||
en | ||||||
National Space Development Agency of Japan Space Utilization Research Center | ||||||
著者所属(英) | ||||||
en | ||||||
Advanced Engineering Services Co. Ltd. | ||||||
著者所属(英) | ||||||
en | ||||||
Advanced Engineering Services Co. Ltd. | ||||||
著者所属(英) | ||||||
en | ||||||
Advanced Engineering Services Co. Ltd. | ||||||
著者所属(英) | ||||||
en | ||||||
Toyo University | ||||||
著者所属(英) | ||||||
en | ||||||
Toyo University | ||||||
著者所属(英) | ||||||
en | ||||||
National Space Development Agency of Japan Space Utilization Research Program | ||||||
出版者 | ||||||
出版者 | 宇宙開発事業団 | |||||
出版者(英) | ||||||
出版者 | National Space Development Agency of Japan (NASDA) | |||||
書誌情報 |
宇宙開発事業団技術報告: 化合物半導体研究アニュアルレポート2002:混晶半導体(InGaAs)の結晶育成に及ぼす微小重力の効果に関する研究.均一組成結晶の育成 en : NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2002): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals p. 19-26, 発行日 2003-08-29 |
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抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | The critical freezing rate for avoiding the constitutional supercooling in the crystal growth of In(x)Ga(1-x)As from its melt has been investigated quantitatively and it is found that the critical freezing rate is between 0.25 and 0.28 mm/h at a temperature gradient in the melt of 10 C/cm when the convection is suppressed. Since the critical freezing rate that is calculated by the criteria reported by Tiller et al. in the diffusion limited growth is 0.22 mm/h at 10 C/cm, it can be said that tolerance for the constitutional supercooling exists. When convection in the melt existed, the critical freezing rate for avoiding the constitutional supercooling was reduced below the Tiller's criteria. Local inhomogeneity in the melt caused by convection might increase the local constitutional supercooling even at lower growth rate. The quantitative study on the effect of convection for the constitutional supercooling in a semiconductor crystal growth is the first time. | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1345-7888 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN00364784 | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: AA0046981002 | |||||
レポート番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | レポート番号: NASDA-TMR-030006E |