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Effect of 250keV Electron Irradiation on Properties of CIGS Thin-Film Solar Cells
https://jaxa.repo.nii.ac.jp/records/4305
https://jaxa.repo.nii.ac.jp/records/4305d74416f4-424b-4f58-aec8-991e48ec9f70
名前 / ファイル | ライセンス | アクション |
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61889011.pdf (219.0 kB)
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Item type | 会議発表論文 / Conference Paper(1) | |||||
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公開日 | 2015-03-26 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Effect of 250keV Electron Irradiation on Properties of CIGS Thin-Film Solar Cells | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Solar Cell | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | CIGS | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Radiation | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
資源タイプ | conference paper | |||||
著者 |
Kawakita, S.
× Kawakita, S.× Imaizumi, M.× Ishizuka, S.× Shibata, H.× Niki, S.× Okuda, S.× Kusawake, H.× Kawakita, S.× Imaizumi, M.× Ishizuka, S.× Shibata, H.× Niki, S.× Okuda, S.× Kusawake, H. |
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著者所属 | ||||||
宇宙航空研究開発機構(JAXA) | ||||||
著者所属 | ||||||
宇宙航空研究開発機構(JAXA) | ||||||
著者所属 | ||||||
産業技術総合研究所 | ||||||
著者所属 | ||||||
産業技術総合研究所 | ||||||
著者所属 | ||||||
産業技術総合研究所 | ||||||
著者所属 | ||||||
大阪府立大学 | ||||||
著者所属 | ||||||
宇宙航空研究開発機構(JAXA) | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency (JAXA) | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency (JAXA) | ||||||
著者所属(英) | ||||||
en | ||||||
National Institute of Advanced Industrial Science and Technology (AIST) | ||||||
著者所属(英) | ||||||
en | ||||||
National Institute of Advanced Industrial Science and Technology (AIST) | ||||||
著者所属(英) | ||||||
en | ||||||
National Institute of Advanced Industrial Science and Technology (AIST) | ||||||
著者所属(英) | ||||||
en | ||||||
Osaka Prefecture University (OPU) | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency (JAXA) | ||||||
出版者 | ||||||
出版者 | 宇宙航空研究開発機構(JAXA) | |||||
出版者(英) | ||||||
出版者 | Japan Aerospace Exploration Agency (JAXA) | |||||
書誌情報 |
宇宙航空研究開発機構特別資料 en : JAXA Special Publication 巻 JAXA-SP-12-008E, p. 54-56, 発行日 2013-03-29 |
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抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Electrons with energy of 250keV introduce copper-related defects. The cells were irradiated with the electrons at below 150 K because the radiation defects could be recovered with a thermal annealing effect. The carrier density increased with increasing electron fluence. The electrons can generate Cu-related Frenkel-pairs. Copper vacancy could result in increased carrier density since the shallow acceptor level VCu is assumed to be the main defect in the CIGS absorbing layer. In contrast, a drop in the carrier density of CIGS solar cells irradiated with 1MeV electrons has been reported. In addition, activation energies of defects induced by 250 keV electrons with thermal annealing differ from those by 1MeV electrons. These results indicates that copper-related defects in CIGS induced by radiation do not degrade the CIGS solar cells. | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 形態: カラー図版あり | |||||
内容記述(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Physical characteristics: Original contains color illustrations | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1349-113X | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA11984031 | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: AA0061889011 | |||||
レポート番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | レポート番号: JAXA-SP-12-008E |