Kyoto Institute of Technology
Kyoto Institute of Technology
Sumitomo Electric Industries Ltd Itami Research Laboratories
National Space Development Agency of Japan
National Space Development Agency of Japan
出版者
宇宙開発事業団
出版者（英）
National Space Development Agency of Japan (NASDA)
In(x)Ga(1-x)As substrate material provides a tunable lattice matching between the substrate and the epilayer for InGaAs-based optoelectronic devices. However, it is very difficult to grow InGaAS substrate crystal with a spatial homogeneity in compositional fraction. One of the most important parameters to control the homogeneity of compositional fraction is to choose a proper starting material in the growth process. It has been observed that if the starting material is polycrystalline InGaAs with a certain spatial distribution in compositional fraction, then there is a possibility that homogeneous InGaAS substrate crystal can be grown. It is important to analyze these starting materials, especially, the compositional fraction with a non-destructive method. Here, some results of micro-Raman scattering studies on the compositional fraction in these polycrystalline starting materials are presented. Compositional fractions evaluated by Raman scattering studies in various InGaAs polycrystals show good agreements with those examined by conventional chemical analysis. Micro-Raman scattering presented here is confirmed to be one of the best non-destructive methods to analyze the compositional fraction and its spatial distribution in InGaAs bulk crystals.
Analysis of compositional fraction in polycrystalline In(x)Ga(1-x)As using Raman scattering
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