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Numerical Analysis of Crystal Growth of an InAs-GaAs Binary Semiconductor by the Travelling Liquidus Zone Method Under Microgravity Conditions 杉木, 喜洋 前川, 透 松本, 聡 足立, 聡 依田, 眞一 木下, 恭一 Sugiki, Yoshihiro Maekawa, Toru Matsumoto, Satoshi Adachi, Satoshi Yoda, Shinichi Kinoshita, Kyoichi metadata only access 資料番号: SA1003603000 Elsevier 2004-10 eng journal article https://jaxa.repo.nii.ac.jp/records/26901 http://dx.doi.org/10.1016/j.ijheatmasstransfer.2003.05.002 info:doi/10.1016/j.ijheatmasstransfer.2003.05.002 0017-9310 AA00680396 International Journal of Heat and Mass Transfer 47 21 4535 4546