2026-03-08T03:14:26Z https://jaxa.repo.nii.ac.jp/oai

oai:jaxa.repo.nii.ac.jp:00042844 2023-06-20T20:24:23Z 1887:1893 1896:1898:1933:1934

Study on polycrystallization and residual strain in bulk I[lc]n(x)G[lc]a(1-x)A[lc]s crystal バルクなIn(x)Ga(1-x)As結晶における多結晶化と残余歪みの研究 Islam, M. R. Verma, P. 山田, 正良 児玉, 茂夫 花上, 康宏 木下, 恭一 Islam, M. R. Verma, P. Yamada, Masayoshi Kodama, Shigeo Hanaue, Yasuhiro Kinoshita, Kyoichi In(x)Ga(1-x)As 多結晶化 結晶成長 残余歪み Raman散乱 フォトルミネッセンス 多成分ゾーンメルティング In(x)Ga(1-x)As polycrystallization crystal growth residual strain Raman scattering photoluminescence multicomponent zone melting Micro-Raman scattering and photoluminescence (PL) studies were performed to understand the polycrystallization mechanism in bulk In(x)Ga(1-x)As crystal grown by the two-step multi-component zone melting (MCZM) method. Raman studies were also performed with the aim to understand the influence of residual strain on the shifts in phonon frequencies in Raman spectra. Unlike the usual observation of polycrystallization at the peripheral region of the ingot, a special polycrystallization was observed in the etching results inside the MCZM crystal. The polycrystalline region was found to have a drastic fluctuation of phonon peak positions as well as PL peak wavelength (composition) in the local region, which could be due to supercooling resulting in formation of polycrystal in the investigated crystal. Further, it is observed that the LO(sub GaAs) phonon frequency is varied for various measurement points, which may be related to the compositional variation in the samples. However, it is found from precise micro-Raman measurements both in a corner region and in a chipped region that there exists a large amount of residual strain in the samples. By comparing the observed LO(sub GaAs) phonon frequencies with those estimated from the compositions determined by the energy dispersive x-ray analysis, they are found to be shifted by about 9.5 cm(sup -1) due to residual strain, which corresponds to a strain value of the order of 10(exp -2). 資料番号: AA0045402005 レポート番号: NASDA-TMR-020024E 宇宙開発事業団 National Space Development Agency of Japan (NASDA) 2002-12-27 eng technical report https://jaxa.repo.nii.ac.jp/records/42844 1345-7888 AN00364784 宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystals 61 71 https://jaxa.repo.nii.ac.jp/record/42844/files/45402005.pdf application/pdf 5.2 MB 2020-02-10