2026-03-11T11:00:40Z https://jaxa.repo.nii.ac.jp/oai

oai:jaxa.repo.nii.ac.jp:00026375 2023-06-21T02:21:27Z 1887:1888

Electrical and Photoconductive Properties at 1.8 K of Germanium p+-i Junction Device Fabricated by Surface-Activated Wafer Bonding 金田, 英宏 和田, 武彦 大藪, 進喜 狩野, 良子 桐山, 雄一 服部, 和生 鈴木, 仁研 Ide, Kensuke Kato, Masahiro 渡辺, 健太郎 Kaneda, Hidehiro Wada, Takehiko Oyabu, Shinki Kano, Ryoko Kiriyama, Yuichi Hattori, Yasuki Suzuki, Toyoaki Ide, Kensuke Kato, Masahiro Watanabe, Kentaroh Accepted: 2011-03-12 資料番号: SA1003077000 journal article The Japan Society of Applied Physics 2011-06 Japanese Journal of Applied Physics 6-1 50 0021-4922 AA12295836 https://jaxa.repo.nii.ac.jp/records/26375 eng info:doi/10.1143/JJAP.50.066503 http://dx.doi.org/10.1143/JJAP.50.066503 metadata only access