@inproceedings{oai:jaxa.repo.nii.ac.jp:00013379,
 author = {木下, 恭一 and 荒井, 康智 and 植田, 稔晃 and 足立, 聡 and 宮田, 浩旭 and 田中, 涼太 and 依田, 眞一 and Kinoshita, Kyoichi and Arai, Yasutomo and Ueda, Toshiaki and Adachi, Satoshi and Miyata, Hiroaki and Tanaka, Ryota and Yoda, Shinichi},
 book = {宇宙利用シンポジウム　第24回　平成19年度, Space Utilization Research: Proceedings of the Twenty-fourth Space Utilization Symposium},
 month = {Mar},
 note = {We are preparing for crystal growth experiments in microgravity using a Gradient Heating Furnace (GHF). The one-dimensional Traveling Liquidus-Zone (TLZ) growth model is limited by the radial temperature gradient, convection in a melt and so on. Such factors affecting one-dimensionality are studied experimentally and theoretically. From a viewpoint of single crystal growth we would like to select Si-Ge as target materials. Here, achievements in the present preparatory stage are reported., 資料番号: AA0063706003},
 pages = {25--26},
 publisher = {宇宙航空研究開発機構宇宙科学研究本部, Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA/ISAS)},
 title = {GHF炉を利用した半導体混晶育成},
 year = {2008}
}