@inproceedings{oai:jaxa.repo.nii.ac.jp:00013513,
 author = {早川, 泰弘 and 疋田, 卓也 and 村上, 倫章 and 今野, 有希子 and 小山, 忠信 and 百瀬, 与志美 and 小澤, 哲夫 and 宮澤, 政文 and 熊川, 征司 and Hayakawa, Yasuhiro and Hikida, Takuya and Murakami, Noriaki and Konno, Akiko and Koyama, Tadanobu and Momose, Yoshimi and Ozawa, Tetsuo and Miyazawa, Masafumi and Kumagawa, Masashi},
 book = {宇宙利用シンポジウム　第23回　平成18年度, Space Utilization Research: Proceedings of the Twenty-third Space Utilization Symposium},
 month = {Mar},
 note = {The preliminary experiments to grow homogeneous InGaSb bulk crystals by the temperature gradient method under microgravity have been carried out on earth. During the InGaSb crystal growth, heat pulses were introduced and the growth rate was measured using impurity striations. The temperature gradient in the solution was estimated from the indium compositional profile of the growth crystal. The appropriate cooling rate was calculated from the growth rate and temperature gradient. The homogeneous InGaSb crystals with aimed composition were grown by the appropriate cooling rate., 資料番号: AA0063349015},
 pages = {57--60},
 publisher = {宇宙航空研究開発機構宇宙科学研究本部, Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA/ISAS)},
 title = {均一組成混晶半導体バルク結晶成長},
 year = {2007}
}