{"created":"2023-06-20T14:46:00.676464+00:00","id":13513,"links":{},"metadata":{"_buckets":{"deposit":"77f10d44-a632-4f99-a491-db5e8897bbb3"},"_deposit":{"created_by":1,"id":"13513","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"13513"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00013513","sets":["1543:1633:1644","1887:1891"]},"author_link":["123289","123284","123287","123291","123292","123293","123281","123288","123283","123282","123280","123290","123286","123277","123276","123279","123278","123285"],"item_5_alternative_title_2":{"attribute_name":"その他のタイトル（英）","attribute_value_mlt":[{"subitem_alternative_title":"Growth of homogeneous alloy semiconductors"}]},"item_5_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2007-03","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"60","bibliographicPageStart":"57","bibliographic_titles":[{"bibliographic_title":"宇宙利用シンポジウム　第23回　平成18年度"},{"bibliographic_title":"Space Utilization Research: Proceedings of the Twenty-third Space Utilization Symposium","bibliographic_titleLang":"en"}]}]},"item_5_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"The preliminary experiments to grow homogeneous InGaSb bulk crystals by the temperature gradient method under microgravity have been carried out on earth. During the InGaSb crystal growth, heat pulses were introduced and the growth rate was measured using impurity striations. The temperature gradient in the solution was estimated from the indium compositional profile of the growth crystal. The appropriate cooling rate was calculated from the growth rate and temperature gradient. The homogeneous InGaSb crystals with aimed composition were grown by the appropriate cooling rate.","subitem_description_type":"Other"}]},"item_5_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0063349015","subitem_description_type":"Other"}]},"item_5_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙航空研究開発機構宇宙科学研究本部"}]},"item_5_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA/ISAS)"}]},"item_5_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"静岡大学"},{"subitem_text_value":"静岡大学"},{"subitem_text_value":"静岡大学"},{"subitem_text_value":"静岡大学"},{"subitem_text_value":"静岡大学"},{"subitem_text_value":"静岡大学"},{"subitem_text_value":"静岡理工科大学"},{"subitem_text_value":"静岡大学"},{"subitem_text_value":"静岡大学"}]},"item_5_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Shizuoka University"},{"subitem_text_language":"en","subitem_text_value":"Shizuoka University"},{"subitem_text_language":"en","subitem_text_value":"Shizuoka University"},{"subitem_text_language":"en","subitem_text_value":"Shizuoka University"},{"subitem_text_language":"en","subitem_text_value":"Shizuoka University"},{"subitem_text_language":"en","subitem_text_value":"Shizuoka University"},{"subitem_text_language":"en","subitem_text_value":"Shizuoka Institute of Science and Technology"},{"subitem_text_language":"en","subitem_text_value":"Shizuoka University"},{"subitem_text_language":"en","subitem_text_value":"Shizuoka University"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"早川, 泰弘"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"疋田, 卓也"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"村上, 倫章"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"今野, 有希子"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"小山, 忠信"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"百瀬, 与志美"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"小澤, 哲夫"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"宮澤, 政文"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"熊川, 征司"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hayakawa, Yasuhiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hikida, Takuya","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Murakami, Noriaki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Konno, Akiko","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Koyama, Tadanobu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Momose, Yoshimi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ozawa, Tetsuo","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Miyazawa, Masafumi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kumagawa, Masashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-01-20"}],"displaytype":"detail","filename":"63349015.pdf","filesize":[{"value":"368.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"63349015.pdf","url":"https://jaxa.repo.nii.ac.jp/record/13513/files/63349015.pdf"},"version_id":"2f1b80c0-fef0-4759-b212-abaea3d626ac"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"結晶成長","subitem_subject_scheme":"Other"},{"subitem_subject":"半導体材料","subitem_subject_scheme":"Other"},{"subitem_subject":"インジウム化合物","subitem_subject_scheme":"Other"},{"subitem_subject":"インジウム・ガリウム・アンチモン","subitem_subject_scheme":"Other"},{"subitem_subject":"InGaSb","subitem_subject_scheme":"Other"},{"subitem_subject":"3元化合物半導体","subitem_subject_scheme":"Other"},{"subitem_subject":"温度勾配","subitem_subject_scheme":"Other"},{"subitem_subject":"冷却","subitem_subject_scheme":"Other"},{"subitem_subject":"パルス加熱","subitem_subject_scheme":"Other"},{"subitem_subject":"温度制御","subitem_subject_scheme":"Other"},{"subitem_subject":"濃度プロファイル","subitem_subject_scheme":"Other"},{"subitem_subject":"組成プロファイル","subitem_subject_scheme":"Other"},{"subitem_subject":"結晶形態学","subitem_subject_scheme":"Other"},{"subitem_subject":"結晶性","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal growth","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"semiconductor material","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"indium compound","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"indium gallium antimony","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"InGaSb","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"ternary compound semiconductor","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"temperature gradient","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"cooling","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"pulse heating","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"temperature control","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"concentration profile","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"composition profile","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal morphology","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"crystallinity","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"均一組成混晶半導体バルク結晶成長","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"均一組成混晶半導体バルク結晶成長"}]},"item_type_id":"5","owner":"1","path":["1644","1891"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"13513","relation_version_is_last":true,"title":["均一組成混晶半導体バルク結晶成長"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T05:53:00.858639+00:00"}