{"created":"2023-06-20T14:46:05.623161+00:00","id":13626,"links":{},"metadata":{"_buckets":{"deposit":"a6f8ba27-3a7b-4f1f-9174-1d196ecd854d"},"_deposit":{"created_by":1,"id":"13626","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"13626"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00013626","sets":["1543:1633:1645","1887:1891"]},"author_link":["124601","124605","124603","124600","124604","124596","124599","124602","124594","124598","124595","124606","124597","124593"],"item_5_alternative_title_2":{"attribute_name":"その他のタイトル（英）","attribute_value_mlt":[{"subitem_alternative_title":"Preparation of In(0.1)Ga(0.9)As substrates by the TLZ method and their characterization by PL measurements"}]},"item_5_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006-03","bibliographicIssueDateType":"Issued"},"bibliographicVolumeNumber":"22","bibliographic_titles":[{"bibliographic_title":"宇宙利用シンポジウム"},{"bibliographic_title":"Space Utilization Research: Proceedings of Space Utilization Symposium","bibliographic_titleLang":"en"}]}]},"item_5_description_14":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第22回宇宙利用シンポジウム(2006年1月17日-19日, 日本学術会議6階会議室 六本木、東京)","subitem_description_type":"Other"}]},"item_5_description_15":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）（英）","attribute_value_mlt":[{"subitem_description":"The Twenty-second Space Utilization Symposium (January 17-19, 2006: Science Council of Japan, Roppongi, Tokyo, Japan)","subitem_description_type":"Other"}]},"item_5_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"We have succeeded in growing In(0.1)Ga(0.9)As plate crystals for substrate use by the traveling liquidus-zone (TLZ) method. Excellent compositional uniformity with InAs mole fraction of 0.1 +/- 0.005 and good crystallinity with 0.04 deg  of  FWHM of X-ray rocking curve were obtained. In order to evaluate crystal quality, MQW layers were grown on these substrates and PL spectra from the MQW layers were measured. Sharp and narrow PL peaks show high quality of the substrates as well as the grown thin films.","subitem_description_type":"Other"}]},"item_5_description_18":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"形態: カラー図版あり","subitem_description_type":"Other"},{"subitem_description":"共催: 日本学術会議","subitem_description_type":"Other"}]},"item_5_description_19":{"attribute_name":"内容記述（英）","attribute_value_mlt":[{"subitem_description":"Physical characteristics: Original contains color illustrations","subitem_description_type":"Other"},{"subitem_description":"Meeting sponsors: The Science Council of Japan, The Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (ISAS)(JAXA)","subitem_description_type":"Other"}]},"item_5_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0064113009","subitem_description_type":"Other"}]},"item_5_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙航空研究開発機構宇宙科学研究本部"}]},"item_5_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)"}]},"item_5_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN10324210","subitem_source_identifier_type":"NCID"}]},"item_5_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"宇宙航空研究開発機構宇宙科学研究本部"},{"subitem_text_value":"宇宙航空研究開発機構宇宙科学研究本部"},{"subitem_text_value":"宇宙航空研究開発機構宇宙科学研究本部"},{"subitem_text_value":"NTTフォトニクス研究所"},{"subitem_text_value":"NTTフォトニクス研究所"},{"subitem_text_value":"NTTフォトニクス研究所"},{"subitem_text_value":"宇宙航空研究開発機構宇宙科学研究本部"}]},"item_5_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)(ISAS)"},{"subitem_text_language":"en","subitem_text_value":"Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)(ISAS)"},{"subitem_text_language":"en","subitem_text_value":"Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)(ISAS)"},{"subitem_text_language":"en","subitem_text_value":"NTT Photonics Laboratories"},{"subitem_text_language":"en","subitem_text_value":"NTT Photonics Laboratories"},{"subitem_text_language":"en","subitem_text_value":"NTT Photonics Laboratories"},{"subitem_text_language":"en","subitem_text_value":"Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)(ISAS)"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"木下, 恭一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"緒方, 康行"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"足立, 聡"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"荒井, 昌和"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"渡辺, 孝夫"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"近藤, 康洋"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"依田, 眞一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kinoshita, Kyoichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ogata, Yasuyuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Adachi, Satoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Arai, Masakazu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Watanabe, Takao","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kondo, Yashuhiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yoda, Shinichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-01-20"}],"displaytype":"detail","filename":"64113009.pdf","filesize":[{"value":"732.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"64113009.pdf","url":"https://jaxa.repo.nii.ac.jp/record/13626/files/64113009.pdf"},"version_id":"0a3c2e99-99a7-430e-9df0-3a166fab2089"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Crystal Growth, TLZ Method, In(0.3)Ga(0.7)As, Diffusion, Substrate","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"TLZ 法によるIn(0.1)Ga(0.9)As 基板作製とPL 測定による評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"TLZ 法によるIn(0.1)Ga(0.9)As 基板作製とPL 測定による評価"}]},"item_type_id":"5","owner":"1","path":["1645","1891"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"13626","relation_version_is_last":true,"title":["TLZ 法によるIn(0.1)Ga(0.9)As 基板作製とPL 測定による評価"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T05:49:10.330407+00:00"}