@inproceedings{oai:jaxa.repo.nii.ac.jp:00013732,
 author = {長汐, 晃輔 and 栗林, 一彦 and Nagashio, Kosuke and Kuribayashi, Kazuhiko},
 book = {宇宙利用シンポジウム　第21回　平成16年度, Space Utilization Research: Proceedings of the Twenty-first Space Utilization Symposium},
 month = {Mar},
 note = {The various types of facet Si dendrites observed on splat-quenched surfaces were analyzed. The growth directions of typical facet dendrites were determined to be (211), (110) and (100) using an electron backscatter pattern apparatus. It was found that both the (211) and (110) dendrites with twins were bounded by atomically smooth (111) planes. The dendrite tip shape and facet planes determined by an atomic force microscope suggest that the (100) dendrites are bounded by atomically rough (110) and (100) planes. That is, facet Si dendrites vary in their growth direction and morphology with increasing undercooling because the dendrites select atomically rough interfaces in order to promote the incorporation of atoms at high undercoolings., 資料番号: AA0048095003},
 pages = {9--12},
 publisher = {宇宙航空研究開発機構宇宙科学研究本部, Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA/ISAS)},
 title = {Growth mechanism of Si from undercooled melts},
 year = {2005}
}