@inproceedings{oai:jaxa.repo.nii.ac.jp:00013749,
 author = {木下, 恭一 and 緒方, 康行 and 足立, 聡 and 鶴, 哲也 and 宮田, 浩旭 and 村松, 祐治 and 依田, 眞一 and Kinoshita, Kyoichi and Ogata, Yasuyuki and Adachi, Satoshi and Tsuru, Tetsuya and Miyata, Hiroaki and Muramatsu, Yuji and Yoda, Shinichi},
 book = {宇宙利用シンポジウム　第21回　平成16年度, Space Utilization Research: Proceedings of the Twenty-first Space Utilization Symposium},
 month = {Mar},
 note = {In(0.3)Ga(0.7)As plate crystal growth for substrate use by the Traveling Liquidus-Zone (TLZ) method has been succeeded. Convection in a melt during crystal growth was suppressed by shaping a grown crystal into a plate with thickness of 2 mm. Two step growth; that is, an In(0.1)Ga(0.9)As crystal growth from a GaAs seed in the first step and an In(0.3)Ga(0.7)As crystal growth from an In(0.1)Ga(0.9)As seed in the second step was a key to grow In(0.3)Ga(0.7)As single crystals., 資料番号: AA0048095020},
 pages = {84--86},
 publisher = {宇宙航空研究開発機構宇宙科学研究本部, Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA/ISAS)},
 title = {TLZ法によるIn(0.3)Ga(0.7)As基板用結晶作製},
 year = {2005}
}