{"created":"2023-06-20T14:46:11.566858+00:00","id":13749,"links":{},"metadata":{"_buckets":{"deposit":"6027fc62-33a8-4134-8ab0-aa168107f545"},"_deposit":{"created_by":1,"id":"13749","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"13749"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00013749","sets":["1543:1633:1646","1887:1891"]},"author_link":["126204","126203","126206","126209","126205","126212","126200","126208","126211","126201","126213","126210","126207","126202"],"item_5_alternative_title_2":{"attribute_name":"その他のタイトル（英）","attribute_value_mlt":[{"subitem_alternative_title":"Preparation of In(0.3)Ga(0.7)As substrates by the TLZ method"}]},"item_5_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2005-03","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"86","bibliographicPageStart":"84","bibliographic_titles":[{"bibliographic_title":"宇宙利用シンポジウム　第21回　平成16年度"},{"bibliographic_title":"Space Utilization Research: Proceedings of the Twenty-first Space Utilization Symposium","bibliographic_titleLang":"en"}]}]},"item_5_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"In(0.3)Ga(0.7)As plate crystal growth for substrate use by the Traveling Liquidus-Zone (TLZ) method has been succeeded. Convection in a melt during crystal growth was suppressed by shaping a grown crystal into a plate with thickness of 2 mm. Two step growth; that is, an In(0.1)Ga(0.9)As crystal growth from a GaAs seed in the first step and an In(0.3)Ga(0.7)As crystal growth from an In(0.1)Ga(0.9)As seed in the second step was a key to grow In(0.3)Ga(0.7)As single crystals.","subitem_description_type":"Other"}]},"item_5_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0048095020","subitem_description_type":"Other"}]},"item_5_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙航空研究開発機構宇宙科学研究本部"}]},"item_5_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA/ISAS)"}]},"item_5_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"},{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"},{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"},{"subitem_text_value":"エイ・イー・エス"},{"subitem_text_value":"エイ・イー・エス"},{"subitem_text_value":"エイ・イー・エス"},{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"}]},"item_5_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"},{"subitem_text_language":"en","subitem_text_value":"Advanced Engineering Services Co. Ltd."},{"subitem_text_language":"en","subitem_text_value":"Advanced Engineering Services Co. Ltd."},{"subitem_text_language":"en","subitem_text_value":"Advanced Engineering Services Co. Ltd."},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"木下, 恭一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"緒方, 康行"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"足立, 聡"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"鶴, 哲也"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"宮田, 浩旭"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"村松, 祐治"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"依田, 眞一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kinoshita, Kyoichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ogata, Yasuyuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Adachi, Satoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tsuru, Tetsuya","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Miyata, Hiroaki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Muramatsu, Yuji","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yoda, Shinichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"結晶成長","subitem_subject_scheme":"Other"},{"subitem_subject":"飽和溶液帯移動法","subitem_subject_scheme":"Other"},{"subitem_subject":"拡散","subitem_subject_scheme":"Other"},{"subitem_subject":"基板","subitem_subject_scheme":"Other"},{"subitem_subject":"インジウムガリウムヒ化物","subitem_subject_scheme":"Other"},{"subitem_subject":"温度勾配","subitem_subject_scheme":"Other"},{"subitem_subject":"組成プロファイル","subitem_subject_scheme":"Other"},{"subitem_subject":"種結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"液相","subitem_subject_scheme":"Other"},{"subitem_subject":"固相","subitem_subject_scheme":"Other"},{"subitem_subject":"単結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal growth","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"traveling liquidus-zone method","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"diffusion","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"substrate","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"indium gallium arsenide","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"temperature gradient","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"compositional profile","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"seed crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"liquid phase","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"solid phase","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"single crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"TLZ法によるIn(0.3)Ga(0.7)As基板用結晶作製","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"TLZ法によるIn(0.3)Ga(0.7)As基板用結晶作製"}]},"item_type_id":"5","owner":"1","path":["1646","1891"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"13749","relation_version_is_last":true,"title":["TLZ法によるIn(0.3)Ga(0.7)As基板用結晶作製"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T05:45:23.827479+00:00"}