{"created":"2023-06-20T14:46:11.694272+00:00","id":13751,"links":{},"metadata":{"_buckets":{"deposit":"64d84c97-7afa-4e19-bfb8-54755ab9c8d0"},"_deposit":{"created_by":1,"id":"13751","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"13751"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00013751","sets":["1543:1633:1646","1887:1891"]},"author_link":["126224","126233","126235","126231","126227","126232","126229","126230","126234","126237","126236","126228","126226","126225"],"item_5_alternative_title_2":{"attribute_name":"その他のタイトル（英）","attribute_value_mlt":[{"subitem_alternative_title":"Homogeneous InGaSb crystal growth for future space experiment"}]},"item_5_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2005-03","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"94","bibliographicPageStart":"91","bibliographic_titles":[{"bibliographic_title":"宇宙利用シンポジウム　第21回　平成16年度"},{"bibliographic_title":"Space Utilization Research: Proceedings of the Twenty-first Space Utilization Symposium","bibliographic_titleLang":"en"}]}]},"item_5_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"For InGaSb crystal growth under microgravity condition using International Space Station, homogeneous InGaSb crystal growth was carried out under 1 G condition. Growth rate was measured by thermal pulse technique. By keeping growth interface temperature constant according to crystal growth, growth of InGaSb crystals with uniform composition was achieved.","subitem_description_type":"Other"}]},"item_5_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0048095022","subitem_description_type":"Other"}]},"item_5_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙航空研究開発機構宇宙科学研究本部"}]},"item_5_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA/ISAS)"}]},"item_5_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"静岡大学電子工学研究所"},{"subitem_text_value":"静岡大学電子工学研究所"},{"subitem_text_value":"静岡大学電子工学研究所"},{"subitem_text_value":"静岡大学電子工学研究所"},{"subitem_text_value":"静岡大学電子工学研究所"},{"subitem_text_value":"静岡大学電子工学研究所"},{"subitem_text_value":"静岡大学電子工学研究所"}]},"item_5_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Research Institute of Electronics, Shizuoka University"},{"subitem_text_language":"en","subitem_text_value":"Research Institute of Electronics, Shizuoka University"},{"subitem_text_language":"en","subitem_text_value":"Research Institute of Electronics, Shizuoka University"},{"subitem_text_language":"en","subitem_text_value":"Research Institute of Electronics, Shizuoka University"},{"subitem_text_language":"en","subitem_text_value":"Research Institute of Electronics, Shizuoka 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Yasuhiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"結晶成長","subitem_subject_scheme":"Other"},{"subitem_subject":"アンチモン化ガリウム","subitem_subject_scheme":"Other"},{"subitem_subject":"アンチモン化インジウム","subitem_subject_scheme":"Other"},{"subitem_subject":"2元相図","subitem_subject_scheme":"Other"},{"subitem_subject":"成長速度","subitem_subject_scheme":"Other"},{"subitem_subject":"熱パルス","subitem_subject_scheme":"Other"},{"subitem_subject":"成長界面","subitem_subject_scheme":"Other"},{"subitem_subject":"組成プロファイル","subitem_subject_scheme":"Other"},{"subitem_subject":"熱勾配","subitem_subject_scheme":"Other"},{"subitem_subject":"再結晶化","subitem_subject_scheme":"Other"},{"subitem_subject":"微小重力","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal growth","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"gallium antimonide","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"indium antimonide","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"binary phase diagram","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"growth rate","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"thermal pulse","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"growth interface","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"compositional profile","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"temperature 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