@inproceedings{oai:jaxa.repo.nii.ac.jp:00013879,
 author = {長汐, 晃輔 and Feigelson, R. S. and Giles, N. C. and Halliburton, L. E. and Schunemann, P. G. and 栗林, 一彦 and Nagashio, Kosuke and Feigelson, R. S. and Giles, N. C. and Halliburton, L. E. and Schunemann, P. G. and Kuribayashi, Kazuhiko},
 book = {宇宙利用シンポジウム　第20回　平成15年度, Space Utilization Research: Proceedings of the Twentieth Space Utilization Symposium},
 month = {Mar},
 note = {While CdGeAs2 single crystals are promising for infrared second harmonic generation, it has been difficult to reproducibly grow low loss optical material, particularly in the 5 micrometer region. In addition, a correlation between processing conditions and absorption has eluded various researchers studying this problem. This paper describes a series of etching experiments which were undertaken to see if there might be a relationship between dislocation density and optical absorption., 資料番号: AA0046917074},
 pages = {238--241},
 publisher = {宇宙航空研究開発機構宇宙科学研究本部, Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA/ISAS)},
 title = {Correlation between dislocation etch pits and optical absorption in CdGeAs2},
 year = {2004}
}