{"created":"2023-06-20T14:46:20.050755+00:00","id":13879,"links":{},"metadata":{"_buckets":{"deposit":"3b57bf92-f7b0-475e-8140-5fe36b3d0a46"},"_deposit":{"created_by":1,"id":"13879","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"13879"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00013879","sets":["1543:1633:1647","1887:1891"]},"author_link":["127422","127433","127428","127426","127430","127431","127424","127425","127432","127429","127423","127427"],"item_5_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"非線形光学CdGeAs2単結晶におけるエッチピットと吸収の関係"}]},"item_5_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2004-03","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"241","bibliographicPageStart":"238","bibliographic_titles":[{"bibliographic_title":"宇宙利用シンポジウム　第20回　平成15年度"},{"bibliographic_title":"Space Utilization Research: Proceedings of the Twentieth Space Utilization Symposium","bibliographic_titleLang":"en"}]}]},"item_5_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"While CdGeAs2 single crystals are promising for infrared second harmonic generation, it has been difficult to reproducibly grow low loss optical material, particularly in the 5 micrometer region. In addition, a correlation between processing conditions and absorption has eluded various researchers studying this problem. This paper describes a series of etching experiments which were undertaken to see if there might be a relationship between dislocation density and optical absorption.","subitem_description_type":"Other"}]},"item_5_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0046917074","subitem_description_type":"Other"}]},"item_5_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙航空研究開発機構宇宙科学研究本部"}]},"item_5_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA/ISAS)"}]},"item_5_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Stanford University Center for Material Research"},{"subitem_text_value":"Stanford University Center for Material Research"},{"subitem_text_value":"West Virginia University Department of Physics"},{"subitem_text_value":"West Virginia University Department of Physics"},{"subitem_text_value":"BAE Systems"},{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"}]},"item_5_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Stanford University Center for Material Research"},{"subitem_text_language":"en","subitem_text_value":"Stanford University Center for Material Research"},{"subitem_text_language":"en","subitem_text_value":"West Virginia University Department of Physics"},{"subitem_text_language":"en","subitem_text_value":"West Virginia University Department of Physics"},{"subitem_text_language":"en","subitem_text_value":"BAE Systems"},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"長汐, 晃輔"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Feigelson, R. S."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Giles, N. C."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Halliburton, L. E."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Schunemann, P. G."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"栗林, 一彦"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nagashio, Kosuke","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Feigelson, R. S.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Giles, N. C.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Halliburton, L. E.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Schunemann, P. G.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kuribayashi, Kazuhiko","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"CdGeAs2","subitem_subject_scheme":"Other"},{"subitem_subject":"光学吸収","subitem_subject_scheme":"Other"},{"subitem_subject":"勾配凍結法","subitem_subject_scheme":"Other"},{"subitem_subject":"結晶転位","subitem_subject_scheme":"Other"},{"subitem_subject":"単結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"エッチング","subitem_subject_scheme":"Other"},{"subitem_subject":"吸収度","subitem_subject_scheme":"Other"},{"subitem_subject":"結晶成長","subitem_subject_scheme":"Other"},{"subitem_subject":"CdGeAs2","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"optical absorption","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"gradient freeze technique","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal dislocation","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"single crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"etching","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"absorptivity","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal growth","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"Correlation between dislocation etch pits and optical absorption in CdGeAs2","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Correlation between dislocation etch pits and optical absorption in CdGeAs2","subitem_title_language":"en"}]},"item_type_id":"5","owner":"1","path":["1647","1891"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"13879","relation_version_is_last":true,"title":["Correlation between dislocation etch pits and optical absorption in CdGeAs2"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T05:43:20.061729+00:00"}