@inproceedings{oai:jaxa.repo.nii.ac.jp:00013887,
 author = {飯田, 拓巳 and 小池, 裕介 and 林王, 正樹 and 日比谷, 孟俊 and 水野, 章敏 and 渡辺, 匡人 and Iida, Takumi and Koike, Yusuke and Rinno, Masaki and Hibiya, Taketoshi and Mizuno, Akitoshi and Watanabe, Masahito},
 book = {宇宙利用シンポジウム　第20回　平成15年度, Space Utilization Research: Proceedings of the Twentieth Space Utilization Symposium},
 month = {Mar},
 note = {The surface tension of molten semiconductors, Si, Ge, and others is important property for process control in the crystal growth. However there have been only a few reports on the surface tension of molten Ge including undercooled region. Therefore, with these of electromagnetic levitation method (EML), the temperature dependence of surface tension of deeply undercooled molten Ge was measured., 資料番号: AA0046917082},
 pages = {267--270},
 publisher = {宇宙航空研究開発機構宇宙科学研究本部, Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA/ISAS)},
 title = {過冷却状態におけるGe融液の表面張力温度依存性},
 year = {2004}
}