@inproceedings{oai:jaxa.repo.nii.ac.jp:00013960, author = {菊池, 正則 and 稲富, 裕光 and 栗林, 一彦 and 神保, 至 and Kikuchi, Masanori and Inatomi, Yuko and Kuribayashi, Kazuhiko and Jinbo, Itaru}, book = {宇宙利用シンポジウム 第19回 平成14年度, Space Utilization Research: Proceedings of the Nineteenth Space Utilization Symposium}, month = {Feb}, note = {In this research, the morphological changes during GaP solution growth of the S/L interface were observed under static magnetic field using near-infrared (NIR) microscope with an interferometer. The damping effect of convection by means of analyzing fringe pattern during dissolution and growth was discussed., 資料番号: AA0045438053}, pages = {186--188}, publisher = {宇宙科学研究所, The Institute of Space and Astronautical Science (ISAS)}, title = {化合物半導体の溶液成長における界面安定性の面方位依存性}, year = {2003} }