{"created":"2023-06-20T14:49:38.659874+00:00","id":17544,"links":{},"metadata":{"_buckets":{"deposit":"f54cc7d5-2daf-462a-8c96-892e440fa2cb"},"_deposit":{"created_by":1,"id":"17544","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"17544"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00017544","sets":["1543:1712:1717","1887:1891"]},"author_link":["158935","158929","158931","158933","158934","158926","158928","158930","158932","158927"],"item_5_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"-次世代電力変換器用途-  SiC用高温Au-Geダイボンドとその信頼性評価"}]},"item_5_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2011-04","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"13","bibliographicPageStart":"5","bibliographic_titles":[{"bibliographic_title":"第21回高温エレクトロニクス研究会"},{"bibliographic_title":"Proceedings of the 21st ISAS Research Meeting on HIGH TEMPERATURE ELECTRONICS","bibliographic_titleLang":"en"}]}]},"item_5_description_14":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第21回高温エレクトロニクス研究会（2011年3月2日. 宇宙航空研究開発機構宇宙科学研究所（JAXA)(ISAS)）, 相模原市, 神奈川県","subitem_description_type":"Other"}]},"item_5_description_15":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）（英）","attribute_value_mlt":[{"subitem_description":"The 21st ISAS Research Meeting on High Temperature Electronics (March 2, 2011. 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