@inproceedings{oai:jaxa.repo.nii.ac.jp:00017553,
 author = {野本, 一貴 and 中村, 徹 and Nomoto, Kazuki and Nakamura, Toru},
 book = {高温エレクトロニクス研究会, Proceedings of ISAS research meeting on High Temperature Electronics},
 month = {Jul},
 note = {第20回高温エレクトロニクス研究会(2010年3月24日, 宇宙航空研究開発機構宇宙科学研究本部), The 20th ISAS research meeting on High Temperature Electronics (March 24, 2010. Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)), Sagamihara, Kanagawa Japan, 資料番号: AA0064728004},
 pages = {49--63},
 publisher = {宇宙航空研究開発機構宇宙科学研究所, Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)},
 title = {Ion-Implanted GaN-HEMTs for High Temperature Operation},
 volume = {20},
 year = {2010}
}