{"created":"2023-06-20T14:49:39.523951+00:00","id":17563,"links":{},"metadata":{"_buckets":{"deposit":"c1f208ec-bf18-4268-8686-5a06c667a3ed"},"_deposit":{"created_by":1,"id":"17563","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"17563"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00017563","sets":["1543:1712:1719","1887:1891"]},"author_link":["158980","158977","158978","158982","158976","158974","158981","158979","158975","158983"],"item_5_alternative_title_2":{"attribute_name":"その他のタイトル（英）","attribute_value_mlt":[{"subitem_alternative_title":"Displacement damege and single event effects on SiC devices"}]},"item_5_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2009-06","bibliographicIssueDateType":"Issued"},"bibliographicVolumeNumber":"19","bibliographic_titles":[{"bibliographic_title":"高温エレクトロニクス研究会"},{"bibliographic_title":"Proceedings of ISAS research meeting on High Temperature Electronics","bibliographic_titleLang":"en"}]}]},"item_5_description_14":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第19回高温エレクトロニクス研究会(2009年3月12日, 宇宙航空研究開発機構宇宙科学研究本部相模原キャンパス)","subitem_description_type":"Other"}]},"item_5_description_15":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）（英）","attribute_value_mlt":[{"subitem_description":"The 19th ISAS research meeting on High Temperature Electronics (Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA), March 12, 2009)","subitem_description_type":"Other"}]},"item_5_description_16":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"原子力機構では､パワーデバイス･耐放射線性デバイスとしての利用が期待される炭化ケイ素(SiC; Silicon Carbide)半導体に対して､トータルドーズ効果､はじき出し損傷効果､およびシングルイベント効果といった放射線影響に関する研究を行っている｡今回は､はじき出し損傷効果に関する研究の一例として､SiCダイオ-ド(粒子検出器)にガンマ線､電子線､陽子線を照射し､照射前後のキャリア濃度や粒子検出器の性能を示す指標である電荷収集効率(CCE; Charge Collection Efficiency)を評価した結果について報告する｡また､シングルイベント効果に関する研究の一例として､SiCダイオードに重イオン1個を照射し､その際に発生する過渡電流を計測するシステムや測定結果について紹介する｡","subitem_description_type":"Abstract"}]},"item_5_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"Silicon Carbide (SiC) is one of the most candidate semiconductor materials for high-power and rad-hard electronics. We have studied the total ionizing dose, displacement damage, and single event effects on SiC devices. One of the experimental results of displacement damage effects on SiC diodes is introduced here. The carrier density of epitaxial layer and Charge Collection Efficiency (CCE) reduce with increase in fluence of gamma-ray, 1 MeV electrons, and 65 MeV protons. In addition to this, the experimental setup and results for transient current induced by an ion strike are expressed in this presentation.","subitem_description_type":"Other"}]},"item_5_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0064294007","subitem_description_type":"Other"}]},"item_5_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙航空研究開発機構宇宙科学研究本部"}]},"item_5_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)"}]},"item_5_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11987120","subitem_source_identifier_type":"NCID"}]},"item_5_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"日本原子力研究開発機構"},{"subitem_text_value":"日本原子力研究開発機構"},{"subitem_text_value":"産業技術総合研究所"},{"subitem_text_value":"電気通信大学"},{"subitem_text_value":"日本原子力研究開発機構"}]},"item_5_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Japan Atomic Energy Agency (JAEA)"},{"subitem_text_language":"en","subitem_text_value":"Japan Atomic Energy Agency (JAEA)"},{"subitem_text_language":"en","subitem_text_value":"National Institute of Advanced Industrial Science and Technology (AIST)"},{"subitem_text_language":"en","subitem_text_value":"University of Electro-Communications (UEC)"},{"subitem_text_language":"en","subitem_text_value":"Japan Atomic Energy Agency (JAEA)"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"小野田, 忍"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"岩本, 直也"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"児島, 一聡"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"河野, 勝泰"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Onoda, Shinobu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Iwamoto, Naoya","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kojima, Kazutoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kawano, Katsuyasu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Oshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"SiCデバイスのはじき出し損傷効果とシングルイベント効果","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"SiCデバイスのはじき出し損傷効果とシングルイベント効果"}]},"item_type_id":"5","owner":"1","path":["1719","1891"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"17563","relation_version_is_last":true,"title":["SiCデバイスのはじき出し損傷効果とシングルイベント効果"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T04:36:26.742986+00:00"}