{"created":"2023-06-20T14:49:39.702424+00:00","id":17567,"links":{},"metadata":{"_buckets":{"deposit":"02bdd9e8-065f-42b0-96ee-7d41d844514f"},"_deposit":{"created_by":1,"id":"17567","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"17567"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00017567","sets":["1543:1712:1720","1887:1891"]},"author_link":["159012","159013","159007","159006","159009","159011","159008","159010"],"item_5_alternative_title_2":{"attribute_name":"その他のタイトル（英）","attribute_value_mlt":[{"subitem_alternative_title":"Electrical characteristics of SiC Zener diodes at high temperature"}]},"item_5_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008-05","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"43","bibliographicPageStart":"33","bibliographicVolumeNumber":"18","bibliographic_titles":[{"bibliographic_title":"高温エレクトロニクス研究会"},{"bibliographic_title":"ISAS Research Meeting on high Temperature Electronics","bibliographic_titleLang":"en"}]}]},"item_5_description_14":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第18回高温エレクトロニクス研究会. 日時: 2008年3月5日. 会場: 宇宙航空研究開発機構宇宙科学研究本部相模原キャンパス","subitem_description_type":"Other"}]},"item_5_description_16":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"本発表では、従来のSiツェナーダイオードに比べて高い動作容量を有し、かつ高温領域でも安定した特性をもつSiCツェナーダイオードを実現したので、その結果を報告する。今回作製したSiCツェナーダイオードは、高ドーピング密度のpn接合界面および4mm×4mmの大きな通電面積を有しており、その絶縁破壊電圧の温度依存係数は、20～300℃で5.7×10(exp -5)1/Kと小さく、また矩形波(t(sub w)=1ms)の条件下で測定した動作容量は、20℃で6.3ｋW(40kW/cm2)、300℃でも6.0kW(38kW/cm2)と優れた電気特性を示した。","subitem_description_type":"Abstract"}]},"item_5_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"The achievement of high-power SiC Zener diodes at high temperature has been reported. The SiC Zener diodes have a high-doped pn junction and a large active area of 4 mm x 4 mm. The temperature coefficient of the breakdown voltage is as small as 5.7 x 10(exp -5) 1/K (positive) in the temperature range 20-300 C. In addition, reverse power capabilities of 6.3 kW (40 kW/cm2) at 20 C and 6.0 kW (38 k/cm2) at 300 C during rectangular pulsed power operation (t(sub w) = 1 ms) have been achieved without device failure.","subitem_description_type":"Other"}]},"item_5_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0063966003","subitem_description_type":"Other"}]},"item_5_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙航空研究開発機構宇宙科学研究本部宇宙科学情報解析センター"}]},"item_5_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"The Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)"}]},"item_5_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11987120","subitem_source_identifier_type":"NCID"}]},"item_5_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"関西電力"},{"subitem_text_value":"関西電力"},{"subitem_text_value":"関西電力"},{"subitem_text_value":"電力中央研究所"}]},"item_5_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Kansai Electric Power"},{"subitem_text_language":"en","subitem_text_value":"Kansai Electric Power"},{"subitem_text_language":"en","subitem_text_value":"Kansai Electric Power"},{"subitem_text_language":"en","subitem_text_value":"Central Research Institute of Electric Power Industry"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"石井, 竜介"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"中山, 浩二"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"菅原, 良孝"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"土田, 秀一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ishii, Ryusuke","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nakayama, Koji","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Sugawara, Yoshitaka","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tsuchida, Hidekazu","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"SiC, ツェナーダイオード, 高温, 高動作容量","subitem_subject_scheme":"Other"},{"subitem_subject":"SiC, Zener diodes, high temperature, high power","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"SiCツェナーダイオードの高温動作","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"SiCツェナーダイオードの高温動作"}]},"item_type_id":"5","owner":"1","path":["1720","1891"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"17567","relation_version_is_last":true,"title":["SiCツェナーダイオードの高温動作"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T04:36:22.950866+00:00"}